STP7NM60N STMicroelectronics, STP7NM60N Datasheet - Page 7

• Manufacturer Part Number: STP7NM60N
• Description: POWER MOSFET
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP7NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 363pF @ 50V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
I
1000
D
V
(V)
(pF)
100
(A)
12
10
10
GS
C
6
5
4
3
2
1
0
6
2
9
8
7
8
4
0
1
0
0
0.1
V
DS
V
Output characteristics
GS
2
=10V
4
10
1
6
V
DD
8
I
D
20
=480V
=5A
10
10
12
6V
40
100
14
AM06479v1
5V
16
V
V
GS
DS
Doc ID 16472 Rev 4
V
Q
AM06481v1
AM06477v1
DS
(V)
g
V
(V)
500
400
100
0
300
200
(nC)
Ciss
Crss
DS
(V)
Coss
Figure 9.
Figure 13. Output capacitance stored energy
(A)
I
D
R
(
DS(on)
Ohm
0.88
0.86
0.84
0.74
0.82
0.76
E
0.80
0.78
(µJ)
2.0
1.0
10
oss
2.5
1.5
0.5
0
5
4
3
2
1
9
8
7
6
0
0
)
0
0
Transfer characteristics
100
2
1
V
DS
200 300
=20V
4
V
2
GS
Electrical characteristics
=10V
6
3
400
8
4
500 600
10
5
I
V
D
AM06480v1
AM06482v1
AM06478v1
V
(A)
GS
DS
(V)
(V)
7/17