EPM570T100C4N Altera, EPM570T100C4N Datasheet - Page 55

• Manufacturer Part Number: EPM570T100C4N
• Description: IC MAX II CPLD 570 LE 100-TQFP
• Manufacturer: Altera
• Series: MAX® IIr

Specifications of EPM570T100C4N

• Programmable Type: In System Programmable
• Delay Time Tpd(1) Max: 5.4ns
• Voltage Supply - Internal: 2.5V, 3.3V
• Number Of Logic Elements/blocks: 570
• Number Of Macrocells: 440
• Number Of I /o: 76
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 100-TQFP, 100-VQFP
• Voltage: 2.5V, 3.3V
• Memory Type: FLASH
• Number Of Logic Elements/cells: 570
• No. Of I/o's: 76
• Propagation Delay: 7ns
• Global Clock Setup Time: 1.5ns
• Frequency: 247.5MHz
• Supply Voltage Range: 2.375V To 2.625V, 3V To 3.6V
• Operating Temperature Range: 0°C To +85°C
• Rohs Compliant: Yes
• No. Of Macrocells: 440
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Other names: 544-1316; EPM570T100C4N

Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices
Power-On Reset Circuitry
Figure 4–4. ESD Protection During Negative Voltage Zap
Power-On Reset Circuitry
© October 2008 Altera Corporation
When the I/O pin receives a negative ESD zap at the pin that is less than –0.7 V (0.7 V
is the voltage drop across a diode), the intrinsic
P-Substrate/N+ drain diode is forward biased. Therefore, the discharge ESD current
path is from GND to the I/O pin, as shown in
MAX II devices have POR circuits to monitor V
power-up. The POR circuit monitors these voltages, triggering download from the
non-volatile configuration flash memory (CFM) block to the SRAM logic, maintaining
tri-state of the I/O pins (with weak pull-up resistors enabled) before and during this
process. When the MAX II device enters user mode, the POR circuit releases the I/O
pins to user functionality. The POR circuit of the MAX II (except MAX IIZ) device
continues to monitor the V
POR circuit of the MAX IIZ device does not monitor the V
device enters into user mode. More details are provided in the following sub-sections.
I/O
GND
Source
Drain
Drain
Source
CCINT
PMOS
NMOS
voltage level to detect a brown-out condition. The
Gate
Gate
P-Substrate
Figure
CCINT
N+
N+
and V
D
S
4–4.
GND
I/O
G
CCIO
CCINT
voltage levels during
voltage level after the
MAX II Device Handbook
4–5