PIC10F200-I/P Microchip Technology, PIC10F200-I/P Datasheet - Page 69
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PIC10F200-I/P
Manufacturer Part Number
PIC10F200-I/P
Description
IC PIC MCU FLASH 256X12 8DIP
Manufacturer
Microchip Technology
Series
PIC® 10Fr
Datasheets
1.PIC10F200T-IOT.pdf
(96 pages)
2.PIC10F200T-IOT.pdf
(6 pages)
3.PIC10F200T-IOT.pdf
(18 pages)
4.PIC10F202-EP.pdf
(88 pages)
Specifications of PIC10F200-I/P
Program Memory Type
FLASH
Program Memory Size
384B (256 x 12)
Package / Case
8-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
3
Ram Size
16 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC10F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
16 B
Interface Type
USB
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
4
Number Of Timers
1
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC162059 - HEADER INTRFC MPLAB ICD2 8/14PINAC164037 - MODULE SKT 6L PROMATE II SOT23
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC10F200-I/P
Manufacturer:
MICROCHIP
Quantity:
1 200
Part Number:
PIC10F200-I/P
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
12.1
2004 Microchip Technology Inc.
DC CHARACTERISTICS
D001
D002
D003
D004
D010
D020
D022
D023
D024
Legend: TBD = To Be Determined.
Note 1:
Param
No.
2:
3:
4:
*
DC Characteristics: PIC10F200/202/204/206 (Industrial)
V
V
V
S
I
I
DD
PD
Sym
I
I
I
DD
DR
POR
VDD
WDT
CMP
VREF
a) The test conditions for all I
b) For standby current measurements, the conditions are the same, except that the device is in Sleep
These parameters are characterized but not tested.
Data in the Typical (“Typ”) column is based on characterization results at 25 C. This data is for design
guidance only and is not tested.
This is the limit to which V
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, bus rate, internal code execution pattern and temperature also have an impact on the current
consumption.
Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and
tied to V
All I/O pins tri-stated, pulled to V
mode.
Supply Voltage
RAM Data Retention Voltage
V
Power-on Reset
V
Power-on Reset
Supply Current
Power-down Current
WDT Current
Comparator Current
Internal Reference Current
DD
DD
DD
Start Voltage to ensure
Rise Rate to ensure
or V
Characteristic
SS
.
(4)
(3)
DD
(4)
(4)
can be lowered in Sleep mode without losing RAM data.
DD
measurements in active Operation mode are:
(4)
SS
(2)
, T0CKI = V
Preliminary
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40 C
0.05*
Min
2.0
—
—
—
—
—
—
—
—
PIC10F200/202/204/206
Typ
TBD
1.5*
170
350
Vss
DD
0.1
1.0
—
15
(1)
, MCLR = V
TBD
TBD
TBD
TBD
TBD
TBD
Max
5.5
—
—
—
Units
DD
V/ms
V
V
V
; WDT enabled/disabled as specified.
A
A
A
A
A
A
See Figure 12-1
Device in Sleep mode
See Section 9.4 “DC Character-
istics” for details
See Section 9.4 “DC Character-
istics” for details
F
F
V
V
V
V
OSC
OSC
DD
DD
DD
DD
T
A
= 2.0V
= 2.0V
= 2.0V
= 2.0V
= 4 MHz, V
= 4 MHz, V
+85 C (industrial)
Conditions
DS41239A-page 67
DD
DD
= 2.0V
= 5.0V