PIC12F510-I/SN Microchip Technology, PIC12F510-I/SN Datasheet - Page 88

• Manufacturer Part Number: PIC12F510-I/SN
• Description: IC PIC MCU FLASH 1KX14 8SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 12Fr

Specifications of PIC12F510-I/SN

• Program Memory Type: FLASH
• Program Memory Size: 1.5KB (1K x 12)
• Package / Case: 8-SOIC (3.9mm Width)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: POR, WDT
• Number Of I /o: 5
• Ram Size: 38 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC12F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 38 B
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 5
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, DV164101, DV164120, DM163029
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 3 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: AC162070 - HEADER INTRFC MPLAB ICD2 8/14P
• Eeprom Size: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC12F510/16F506
13.1
DS41268C-page 86
DC CHARACTERISTICS
D001
D002
D003
D004
D010
D020
D022
D023
D024
D025
D026
Legend: TBD = To be determined.
Note 1:
Parm
No.
2:
3:
4:
5:
*
DC Characteristics: PIC12F510/16F506 (Industrial)
ΔCV
ΔIV
ΔI
ΔI
ΔI
V
S
Sym
V
V
These parameters are characterized but not tested.
Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design
guidance only and is not tested.
This is the limit to which V
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
a) The test conditions for all I
b) For standby current measurements, the conditions are the same, except that the device is in Sleep
Does not include current through R
estimated by the formula:
I = V
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
I
I
POR
VDD
DD
PD
WDT
CMP
ADC
DD
DR
REF
REF
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to V
MCLR = V
WDT enabled/disabled as specified.
mode.
DD
/2R
Supply Voltage
RAM Data Retention
Voltage
V
ensure Power-on Reset
V
Power-on Reset
Supply Current
Power-Down Current
WDT Current
Comparator Current
ADC Current
Internal Reference
Current
Comparator Voltage
Reference Current
DD
DD
EXT
Rise Rate to ensure
Start Voltage to
Characteristic
DD
(mA) with R
(2)
;
(5)
(3)
DD
EXT
can be lowered in Sleep mode without losing RAM data.
DD
(5)
in kΩ.
measurements in active operation mode are:
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40°C ≤ T
0.05*
EXT
Min
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Preliminary
(in EXTRC mode only). The current through the resistor can be
Typ
1.5*
Vss
170
100
0.4
1.7
0.1
1.0
—
—
15
15
80
58
(1)
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max Units
5.5
—
—
—
V/ms See Section 10.4 “Power-on Reset
mA
mA
μA
μA
μA
μA
μA
μA
μA
μA
V
V
V
See Figure 13-1
Device in Sleep mode
See Section 10.4 “Power-on Reset
(POR)”
(POR)” for details
F
F
F
F
disabled
V
V
V
V
V
V
OSC
OSC
OSC
OSC
DD
DD
DD
DD
DD
DD
A
= 2.0V
= 2.0V
= 2.0V
= 2.0V
= 2.0V
= 2.0V
= 4 MHz, V
= 8 MHz, V
= 20 MHz, V
= 32 kHz, V
≤ +85°C (Industrial)
© 2007 Microchip Technology Inc.
Conditions
DD
DD
DD
DD
= 2.0V
= 3.0V
SS
= 2.0V, WDT
= 5.0V
, T0CKI = V
(4)
DD
or V
DD
SS
,
.