TLE6263-3G Infineon Technologies, TLE6263-3G Datasheet - Page 22
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TLE6263-3G
Manufacturer Part Number
TLE6263-3G
Description
IC SYSTEM BASIS CHIP DSO-28
Manufacturer
Infineon Technologies
Datasheet
1.TLE6263-3G.pdf
(40 pages)
Specifications of TLE6263-3G
Controller Type
System Basis Chip
Interface
SPI
Voltage - Supply
13.5V
Current - Supply
1mA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
DSO-28
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000262119
TLE6263-3G
TLE6263-3GINTR
TLE6263-3G
TLE6263-3GINTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TLE6263-3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
TLE6263-3GRB
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Revision 3.1
7.3
V
characteristics); all voltages with respect to ground; positive current defined flowing into pin; unless otherwise
specified.
Parameter
Oscillator
internal oscillating frequency
Internal cycling time
(1/64 * f
Internal cycling time
(1/64 * f
Reset Generator; Pin RO
Reset threshold voltage
Reset low output voltage
Reset high output voltage
Reset pull up current
Reset reaction time
Reset delay time (16 cyl.)
Watchdog Generator
Watchdog trigger
Long open window (128 cyl.)
Closed window (12 cyl.)
Open window (20 cyl.)
Watchdog reset-puls time
(4 cyl.)
Watchdog undercurrent
disable threshold
S
= 13.5 V; I
OSC
OSC
Electrical Characteristics (cont’d)
CC
)
)
-1
-1
= 1 mA; normal mode; all outputs open; – 40 C < T
Symbol
f
t
t
V
V
V
I
t
t
t
t
t
t
t
I
OSC
CYL
CYL
RR
RD
WD
LW
CW
OW
WDR
RO
CCWD
RT
RO
RO
min.
0.43
0.30
4.5
4.0
20
0.6
6.9
7.2
55
5.1
8.6
1.7
0.5
22
Limit Values
typ.
125
0.51
0.51
4.65
0.2
200
2
8.5
10
65
6.1
10.2
2
4
max.
0.64
0.72
4.8
0.4
V
0.1
500
10
12
13.6
81
7.7
13
3
7
j
CC
< 150 C (max. 125°C for CAN circuit
+
Data Sheet TLE 6263-3G
Unit Test Condition
kHz
ms
ms
V
V
V
µs
ms
ms
ms
ms
ms
ms
mA
A
sleep mode
V
I
V
I
V
V
V
T
Watchdog OFF when
I
Ibit 7= H
RO
RO
CC
j
CC
CC
CC
RO
CC
< 85 C;
< I
= 1mA for
= 200 µA for
decreasing
= 0V
Sep. 19th, 2006
V
1V
V
CCWD
RT
RT
or
to RO = L;
and SPI-