S-8261AAHMD-G2H-T2 Seiko Instruments, S-8261AAHMD-G2H-T2 Datasheet - Page 10

• Manufacturer Part Number: S-8261AAHMD-G2H-T2
• Description: Battery Management 4.28V Single Cell
• Manufacturer: Seiko Instruments

Specifications of S-8261AAHMD-G2H-T2

• Product: Li-Ion Protection
• Battery Type: Li-Ion, Li-Pol
• Output Voltage: 8 V
• Operating Supply Voltage: 1.5 V to 8 V
• Supply Current: 7 uA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOT-23-6
• Mounting Style: SMD/SMT
• Uvlo Start Threshold: 1 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

10
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
Measurement Circuits
Unless otherwise specified, the output voltage levels ″H″ and ″L″ at CO and DO pins are judged by the
threshold voltage (1.0 V) of the N channel FET.
level with respect to V
(1) Measurement Condition 1, Measurement Circuit 1
(2) Measurement Condition 2, Measurement Circuit 2
(3) Measurement Condition 3, Measurement Circuit 2
(4) Measurement Condition 4, Measurement Circuit 2
〈〈 Overcharge detection voltage, Overcharge hysteresis voltage〉〉
〈〈Overdischarge detection voltage, Overdischarge hysteresis voltage〉〉
〈〈 Overcurrent 1 detection voltage, Overcurrent 2 detection voltage, Load short-circuiting detection
voltage 〉〉
〈〈 Charger detection voltage, abnormal charge current detection voltage 〉〉
The overcharge detection voltage (V
goes ″L″ from ″H″ when the voltage V1 is gradually increased from the starting condition V1=3.5 V.
The overcharge hysteresis voltage (V
detection voltage (V
the voltage V1 is gradually decreased.
The overdischarge detection voltage (V
V
V and V2=0 V.
between the overdischarge detection voltage (V
V
The overcurrent 1 detection voltage is defined by the voltage between VM and VSS whose delay time
for changing V
overcurrent 1 detection delay time when the voltage V2 is increased rapidly within 10 µs from the
starting condition V1=3.5 V and V2=0 V.
The overcurrent 2 detection voltage is defined by the voltage between VM and VSS whose delay time
for changing V
overcurrent 2 detection delay time when the voltage V2 is increased rapidly within 10 µs from the
starting condition V1=3.5 V and V2=0 V.
The load short-circuiting detection voltage is defined by the voltage between VM and VSS whose
delay time for changing V
load short-circuiting detection delay time when the voltage V2 is increased rapidly within 10 µs from
the starting condition V1=3.5 V and V2=0 V.
Set V1=1.8 V and V2=0 V.
0 V gradually.
detection voltage (V
overdischarge hysteresis V
Set V1=3.5 V and V2=0 V.
when V
charge current detection voltage has the same value as the charger detection voltage (V
DO
DO
goes ″L″ from ″H″ when the voltage V1 is gradually decreased from the starting condition V1=3.5
goes ″H″ from ″L″ when the voltage V1 is gradually increased.
CO
goes ″L″ from ″H″ is the abnormal charge current detection voltage.
DO
DO
SS
The voltage between VM and VSS when V
The overdischarge hysteresis voltage (V
from ″H″ to ″L″ lies between the minimum and the maximum value of the
from ″H″ to ″L″ lies between the minimum and the maximum value of the
.
CU
CHA
) and the voltage between VDD and VSS at which V
). Charger detection voltage can be measured only in the product whose
DO
HD
from ″H″ to ″L″ lies between the minimum and the maximum value of the
Increase V1 gradually until V1=V
Decrease V2 from 0 V gradually.
≠ 0.
CU
HC
) is defined by the voltage between VDD and VSS at which V
Seiko Instruments Inc.
DL
) is then defined by the difference between the overcharge
) is defined by the voltage between VDD and VSS at which
Judge the CO pin level with respect to V
DL
) and the voltage between VDD and VSS at which
HD
DO
) is then defined by the difference
DL
goes ″H″ from ″L″ is the charger
+(V
The voltage between VM and VSS
HD
/2), then decrease V2 from
CO
goes ″H″ from ″L″ when
The abnormal
VM
and the DO pin
CHA
Rev.1.4
).
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CO