S-8261AAHMD-G2H-T2 Seiko Instruments, S-8261AAHMD-G2H-T2 Datasheet - Page 11

• Manufacturer Part Number: S-8261AAHMD-G2H-T2
• Description: Battery Management 4.28V Single Cell
• Manufacturer: Seiko Instruments

Specifications of S-8261AAHMD-G2H-T2

• Product: Li-Ion Protection
• Battery Type: Li-Ion, Li-Pol
• Output Voltage: 8 V
• Operating Supply Voltage: 1.5 V to 8 V
• Supply Current: 7 uA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOT-23-6
• Mounting Style: SMD/SMT
• Uvlo Start Threshold: 1 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Rev.1.4
(7) Measurement Condition 7, Measurement Circuit 4
(8) Measurement Condition 8, Measurement Circuit 4
(9) Measurement Condition 9, Measurement Circuit 5
(10) Measurement Condition 10, Measurement Circuit 5
(11) Measurement Condition 11, Measurement Circuit 2 (Product with 0 V battery charge function)
(5) Measurement Condition 5, Measurement Circuit 2
(6) Measurement Condition 6, Measurement Circuit 3
〈〈 Normal operation current consumption, Power-down current consumption〉〉
〈〈 Internal resistance between VM and VDD, Internal resistance between VM and VSS 〉〉
〈〈 CO pin H resistance, CO pin L resistance 〉〉
〈〈 DO pin H resistance, DO pin L resistance 〉〉
〈〈 Overcharge detection delay time, Overdischarge detection delay time 〉〉
〈〈 Overcurrent 1 detection delay time, Overcurrent 2 detection delay time, Load short-circuiting detection
〈〈 0 V battery charge starting charger voltage 〉〉
Set V1=V2=0 V and decrease V2 gradually.
(V
Set V1=3.5 V and V2=0 V under normal condition.
normal operation consumption current (I
Set V1=V2=1.5 V under overdischarge condition.
power-down current consumption (I
Set V1=1.8 V and V2=0 V.
between VM and VDD.
Set V1=3.5 V and V2=1.0 V. The resistance between VM and VSS is the internal resistance (R
between VM and VSS.`
Set V1=3.5 V, V2=0 V and V3=3.0 V.
Set V1=4.5 V, V2=0 V and V3=0.5 V.
Set V1=3.5 V, V2=0 V and V4=3.0 V.
Set V1=1.8 V, V2=0 V and V4=0.5 V.
The overcharge detection delay time (t
after the V1 rapid increase within 10 µs from the overcharge detection voltage (V
overcharge detection voltage (V
The overdischarge detection delay time (t
after the V1 rapid decrease within 10 µs from the overdischarge detection voltage (V
overdischarge detection voltage (V
delay time, Abnormal charge current detection delay time 〉〉
Set V1=3.5 V and V2=0 V.
needed for V
Set V1=3.5 V and V2=0 V.
needed for V
Set V1=3.5 V and V2=0 V.
needed for V
Set V1=3.5 V and V2=0 V.
needed for V
current detection delay time has the same value as the overcharge detection delay time.
_10
VM
+ 0.1 V or higher) is the 0 V battery charge starting charger voltage (V
DO
DO
DO
CO
to go ″L″ is overcurrent 1 detection delay time (t
to go ″L″ is overcurrent 2 detection delay time (t
to go ″L″ is the load short-circuiting detection delay time (t
to go ″L″ is the abnormal charge current detection delay time.
The resistance between VM and VDD is the internal resistance (R
Increase V2 from 0 V to 0.35 V momentarily (within 10 µs).
Increase V2 from 0 V to 0.7 V momentarily (within 10 µs). The time
Increase V2 from 0 V to 1.6 V momentarily (within 10 µs). The time
Decrease V2 from 0 V to −1.1 V momentarily (within 10 µs). The time
CU
) + 0.2 V in the condition V2=0 V.
BATTERY PROTECTION IC for SINGLE-CELL PACK
DL
PDN
) − 0.2 V in the condition V2=0 V.
).
CU
Seiko Instruments Inc.
CO pin resistance is the CO pin H resistance (R
CO pin resistance is the CO pin L resistance (R
DO pin resistance is the DO pin H resistance (R
DO pin resistance is the DO pin L resistance (R
OPE
) is the time needed for V
DL
).
) is the time needed for V
The voltage between VDD and VM when V
The current I
The current I
IOV1
IOV2
DD
DD
CO
).
).
flowing through VDD pin is the
flowing through VDD pin is the
DO
to change from "H" to "L" just
to change from "H" to "L" just
SHORT
0CHA
).
).
The abnormal charge
CU
) − 0.2 V to the
S-8261 Series
DL
)+0.2 V to the
COL
DOL
COH
DOH
CO
).
).
The time
goes “H”
).
).
VMS
VMD
)
)
11