NTE159 NTE Electronics, Inc., NTE159 Datasheet
NTE159
Manufacturer Part Number
NTE159
Description
Transistor; PNP; Silicon; 80 V; 80 V; 5 V; 1 A; 625 mW; -55 to 150 degC; 200 d
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Switchr
Datasheet
1.NTE159.pdf
(2 pages)
Specifications of NTE159
Complement To
NPN
Current, Collector
800 mA
Current, Collector Cutoff
50 nA
Current, Continuous Collector
1 A
Current, Gain
30
Device Dissipation
0.625 W
Frequency
100 MHz
Material Type
Silicon
Package Type
TO-92
Polarity
PNP
Power Dissipation
625 mW
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Temperature Range, Junction, Operating
-55 to +150 °C
Thermal Resistance, Junction To Ambient
200 °C⁄W
Transistor Polarity
PNP
Transistor Type
PNP
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
Collector-Base Voltage, V
Emitter-Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R
Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com‐
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Derate Above 25°C
plementary pairs have their gain specification (h
Parameter
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= 25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Amplifier, Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
Silicon PNP Transistor
(Compl to NTE123AP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Symbol
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
I
BE(sat)
h
CBO
EBO
FE
D
θJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
I
I
I
V
V
V
V
V
V
V
I
I
I
I
NTE159
C
C
E
C
C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
θJA
CB
CB
CE
CE
CE
CE
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10mA, I
= 10μA, I
= 10μA, I
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 50V, I
= 50V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
E
B
E
E
C
C
C
C
C
= 0
= 0
B
B
B
B
= 0, Note 2
= 0
= 0, T
= 100μA
= 1mA
= 10mA
= 100mA
= 500mA
= 15mA
= 50mA
= 15mA
= 50mA
FE
) matched to within 10% of each other.
A
= +75°C
Min
80
80
25
40
50
40
30
5
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-55° to +150°C
-55° to +150°C
Max
0.15
100
250
0.5
0.9
1.1
50
-
-
-
5
-
-
-
-
83.3°C/W
200°C/W
5mW/°C
625mW
800mA
Unit
nA
μA
nA
V
V
V
V
V
V
V
80V
80V
5V
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NTE159 Summary of contents
Page 1
... Operating Junction Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction to Case, R Thermal Resistance, Junction to Ambient, R Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com‐ plementary pairs have their gain specification (h Electrical Characteristics: (T Parameter OFF Characteristics ...
Page 2
Parameter Dynamic Characteristics Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure Switching Characteristics Turn-On Time Turn-Off Time .105 (2.67) Max .205 (5.2) Max A Symbol Test Conditions 20V 1MHz ob CB ...