NTE159 NTE Electronics, Inc., NTE159 Datasheet - Page 2

• Manufacturer Part Number: NTE159
• Description: Transistor; PNP; Silicon; 80 V; 80 V; 5 V; 1 A; 625 mW; -55 to 150 degC; 200 d
• Manufacturer: NTE Electronics, Inc.
• Type: Audio Amplifier, Switchr

Specifications of NTE159

• Complement To: NPN
• Current, Collector: 800 mA
• Current, Collector Cutoff: 50 nA
• Current, Continuous Collector: 1 A
• Current, Gain: 30
• Device Dissipation: 0.625 W
• Frequency: 100 MHz
• Material Type: Silicon
• Package Type: TO-92
• Polarity: PNP
• Power Dissipation: 625 mW
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Temperature Range, Junction, Operating: -55 to +150 °C
• Thermal Resistance, Junction To Ambient: 200 °C⁄W
• Transistor Polarity: PNP
• Transistor Type: PNP
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 1.5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Dynamic Characteristics
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
Switching Characteristics
Turn-On Time
Turn-Off Time
Parameter
.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
.500
Max
Min
Symbol
C
Ci
NF
h
t
t
on
off
ob
fe
b
A
V
V
I
I
f = 1kHz, B
V
I
C
C
B1
CB
BE
CC
= 500mA, V
= 100mA, V
E B C
= I
= 500mV, f = 1MHz
= 20V, I
= 30V, I
B2
= 50mA
Test Conditions
W
E
C
= 1Hz
= 0, f = 1MHz
CE
CE
= 500mA,
= 10V, f = 100MHz
= 10V, R
.050 (1.27)
.135 (3.45) Min
(4.2)
.165
Max
.105 (2.67) Max
S
= 1kΩ,
Seating Plane
.021 (.445) Dia Max
Min
-
-
1
-
-
-
Typ
-
-
-
-
-
-
Max
100
400
110
30
5
3
Unit
pF
pF
dB
ns
ns