NTE159 NTE Electronics, Inc., NTE159 Datasheet - Page 2

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NTE159

Manufacturer Part Number
NTE159
Description
Transistor; PNP; Silicon; 80 V; 80 V; 5 V; 1 A; 625 mW; -55 to 150 degC; 200 d
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Switchr
Datasheet

Specifications of NTE159

Complement To
NPN
Current, Collector
800 mA
Current, Collector Cutoff
50 nA
Current, Continuous Collector
1 A
Current, Gain
30
Device Dissipation
0.625 W
Frequency
100 MHz
Material Type
Silicon
Package Type
TO-92
Polarity
PNP
Power Dissipation
625 mW
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Temperature Range, Junction, Operating
-55 to +150 °C
Thermal Resistance, Junction To Ambient
200 °C⁄W
Transistor Polarity
PNP
Transistor Type
PNP
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Dynamic Characteristics
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
Switching Characteristics
Turn-On Time
Turn-Off Time
Parameter
.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
.500
Max
Min
Symbol
C
Ci
NF
h
t
t
on
off
ob
fe
b
A
V
V
I
I
f = 1kHz, B
V
I
C
C
B1
CB
BE
CC
= 500mA, V
= 100mA, V
E B C
= I
= 500mV, f = 1MHz
= 20V, I
= 30V, I
B2
= 50mA
Test Conditions
W
E
C
= 1Hz
= 0, f = 1MHz
CE
CE
= 500mA,
= 10V, f = 100MHz
= 10V, R
.050 (1.27)
.135 (3.45) Min
(4.2)
.165
Max
.105 (2.67) Max
S
= 1kΩ,
Seating Plane
.021 (.445) Dia Max
Min
-
-
1
-
-
-
Typ
-
-
-
-
-
-
Max
100
400
110
30
5
3
Unit
pF
pF
dB
ns
ns

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