NTE85 NTE Electronics, Inc., NTE85 Datasheet

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NTE85

Manufacturer Part Number
NTE85
Description
Transistor; TO92; NPN; 30 V; 50 V; 5 V; 500 mA; 625 mW; -55 to 150 degC; 200 d
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Driverr
Datasheet

Specifications of NTE85

Complement To
PNP
Current, Collector
500 mA
Current, Continuous Collector
500 mA
Current, Gain
300
Device Dissipation
0.625 W
Frequency
100 MHz
Gain, Dc Current, Maximum
300
Gain, Dc Current, Minimum
100
Material Type
Silicon
Package Type
TO-92
Polarity
NPN
Power Dissipation
625 mW
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Temperature Range, Junction, Operating
-55 to +150 °C
Thermal Resistance, Junction To Ambient
200 °C⁄W
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Base
50 V
Voltage, Breakdown, Collector To Emitter
30 V
Voltage, Breakdown, Emitter To Base
5 V
Voltage, Collector To Base
50 V
Voltage, Collector To Emitter
30 V
Voltage, Collector To Emitter, Saturation
0.6 V
Voltage, Emitter To Base
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Applications:
D Medium Power Amplifiers
D Class B Audio Outputs
D Hi–Fi Drivers
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
Note 2. These ratings are based on a maximum junction temperature of 150 C.
Electrical Characteristics: (T
Note 3. Pulse Test: Pulse Width
Collector–Emitter Breakdown
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Voltage
Emitter Cutoff Current
Voltage
Derate Above 25 C
be impaired.
Parameter
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose Amplifier
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CBO
(BR)EBO
= +25 C unless otherwise specified)
300 s, Duty Cycle
I
I
CBO
EBO
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
NTE85
CB
BE
thJA
= 100 A, I
= 10mA, I
= 100 A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3V, I
= 20V, I
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
E
B
= 0
E
C
= 0, Note 3
= 0
2%
= 0
= 0
Min
5.0
30
50
Typ
–55 to +150 C
–55 to +150 C
Max Unit
100
100
5.0mW/ C
83.3 C/W
200 C/W
625mW
500mA
nA
nA
V
V
V
30V
50V
5V

Related parts for NTE85

NTE85 Summary of contents

Page 1

... Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage V Emitter–Base Breakdown Voltage V Collector Cutoff Voltage Emitter Cutoff Current Note 3. Pulse Test: Pulse Width NTE85 Silicon NPN Transistor General Purpose Amplifier = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter DC Current Gain Base–Emitter ON Voltage Collector–Emitter Saturation Voltage Current Gain–Bandwidth Product Collector–Base Capacitance Note 3. Pulse Test: Pulse Width .105 (2.67) Max .205 (5.2) Max = +25 C unless otherwise specified) A Symbol Test ...

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