NTE85 NTE Electronics, Inc., NTE85 Datasheet - Page 2

• Manufacturer Part Number: NTE85
• Description: Transistor; TO92; NPN; 30 V; 50 V; 5 V; 500 mA; 625 mW; -55 to 150 degC; 200 d
• Manufacturer: NTE Electronics, Inc.
• Type: Amplifier, Driverr

Specifications of NTE85

• Complement To: PNP
• Current, Collector: 500 mA
• Current, Continuous Collector: 500 mA
• Current, Gain: 300
• Device Dissipation: 0.625 W
• Frequency: 100 MHz
• Gain, Dc Current, Maximum: 300
• Gain, Dc Current, Minimum: 100
• Material Type: Silicon
• Package Type: TO-92
• Polarity: NPN
• Power Dissipation: 625 mW
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Temperature Range, Junction, Operating: -55 to +150 °C
• Thermal Resistance, Junction To Ambient: 200 °C⁄W
• Transistor Polarity: NPN
• Transistor Type: NPN
• Voltage, Breakdown, Collector To Base: 50 V
• Voltage, Breakdown, Collector To Emitter: 30 V
• Voltage, Breakdown, Emitter To Base: 5 V
• Voltage, Collector To Base: 50 V
• Voltage, Collector To Emitter: 30 V
• Voltage, Collector To Emitter, Saturation: 0.6 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): (T
Note 3. Pulse Test: Pulse Width
DC Current Gain
Base–Emitter ON Voltage
Collector–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Collector–Base Capacitance
Parameter
.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
Max
.500
Symbol
Min
V
V
300 s, Duty Cycle
CE(sat)
BE(on)
h
C
f
FE
T
cb
A
= +25 C unless otherwise specified)
V
I
Note 3
I
Note 3
I
V
C
C
C
CE
CB
E C B
= 100mA, V
= 100mA, I
= 50mA, V
= 2V, I
= 10V, I
Test Conditions
C
E
= 50mA, Note 3
CE
B
= 0, f = 1MHz
2%
CE
.050 (1.27)
= 5mA,
= 2V
.135 (3.45) Min
= 2V,
.105 (2.67) Max
(4.2)
.165
Max
.021 (.445) Dia Max
Seating Plane
Min
100
100
0.5
–
–
Typ
–
–
–
–
–
Max
300
1.0
0.6
12
–
MHz
Unit
pF
V
V