SST112-T1-E3 Siliconix / Vishay, SST112-T1-E3 Datasheet
SST112-T1-E3
Manufacturer Part Number
SST112-T1-E3
Description
Transistor; JFET, Switch; N-Channel JFET; -1 to -5 V; 50; -55 V (Typ.); 0.7 V
Manufacturer
Siliconix / Vishay
Datasheet
1.SST112-T1-E3.pdf
(6 pages)
Specifications of SST112-T1-E3
Capacitance, Input
3 pF
Capacitance, Reverse Recovery
12 pF
Capacitance, Source Off
12 pF
Channel Type
N-Channel
Current, Drain Cutoff
1 nA
Current, Drain, Saturation
5 mA
Current, Gate
–5 pA
Current, Gate Operating
–6 nA
Current, Gate Reverse
–1 nA
Noise, Input Voltage
3 nV/√Hz
Noise, Voltage
3 nV/√RZ
On Resistance
50 Ohms
Package Type
TO-236 (SOT-23)
Polarization
N-Channel
Power Dissipation
350 mW
Resistance, Drain To Source On
50 Ohms
Resistance, On
50 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–55 °C
Time, Turn-off
15 ns
Time, Turn-on
2 ns
Transconductance, Forward
6 S
Transistor Type
N-Channel
Voltage, Breakdown, Gate To Source
–55 V
Voltage, Gate To Source, Breakdown
–35 V
Voltage, Gate To Source, Cut-off
–10 V
Voltage, Gate To Source, Forward
0.7 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST112-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications.
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
Gate-Drain, Gate-Source Voltage
Gate Current
Lead Temperature (
Storage Temperature
Operating Junction Temperature
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
D Low On-Resistance: 111 < 30 W
D Fast Switching—t
D Low Leakage: 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
Part Number
J/SST111
J/SST112
J/SST113
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
/
16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
” from case for 10 seconds)
G
V
D
S
TO-226AA (TO-92)
–3 to –10
GS(off)
–1 to –5
ON
v–3
: 4 ns
Top View
. . . . . . . . . . . . . . . . . . . . . . . . . .
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J111
J112
J113
1
2
3
r
DS(on)
100
Max (W)
30
50
. . . . . . . . . . . . . .
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
N-Channel JFETs
–55 to 150_C
–55 to 150_C
I
D(off)
300 _C
50 mA
–35 V
Typ (pA)
The
5
5
5
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391
2N5564/5565/5566 (duals) data sheets.
Power Dissipation
(TO-236)
(TO-226AA)
Notes
a.
t
ON
Derate 2.8 mW/_C above 25_C
Typ (ns)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4
4
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
a
D
S
series,
*Marking Code for TO-236
1
2
TO-236 (SOT-23)
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
Top View
2N4856A/4857A/4858A,
J/SST111 Series
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
Vishay Siliconix
J112 SST112
J113 SST113
J111 SST111
3
G
www.vishay.com
350 mW
360 mW
7-1
and
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SST112-T1-E3 Summary of contents
Page 1
... Derate 2.8 mW/_C above 25_C J/SST111 Series Vishay Siliconix J111 SST111 J112 SST112 J113 SST113 D Analog Switches D Choppers D Sample-and-Hold D Normally “On” Switches D Current Limiters series, 2N4856A/4857A/4858A, TO-236 (SOT-23 Top View SST111 (C1)* SST112 (C2)* SST113 (C3)* *Marking Code for TO-236 www.vishay.com and 350 mW 360 mW 7-1 ...
Page 2
... V 0.005 125_C 0 0 kHz kHz MHz kHz GS(H) GS(H) See Switching Circuit 6 15 Limits J/SST112 J/SST113 Max Min Max Min Max Unit –35 – –10 –1 –5 – –1 –1 – 100 100 NCB Document Number: 70232 S-04028—Rev. E, 04-Jun-01 ...
Page 3
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 100 DSS ...
Page 4
J/SST111 Series Vishay Siliconix Noise Voltage vs. Frequency 100 100 – Frequency (Hz) Gate Leakage Current ...
Page 5
... Frequency (MHz) Output Characteristics –4 V GS(off 0.2 0.4 0.6 V – Drain-Source Voltage (V) DS J/SST111 J/SST112 V –12 V –7 V GS(L) 800 W 1600 D(on) *Non-inductive Rise Time < Rise Time 0.4 ns Fall Time < Input Resistance 10 MW Pulse Width 100 ns Input Capacitance 1.5 pF ...
Page 6
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...