SST112-T1-E3 Siliconix / Vishay, SST112-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SST112-T1-E3
• Description: Transistor; JFET, Switch; N-Channel JFET; -1 to -5 V; 50; -55 V (Typ.); 0.7 V
• Manufacturer: Siliconix / Vishay

Specifications of SST112-T1-E3

• Capacitance, Input: 3 pF
• Capacitance, Reverse Recovery: 12 pF
• Capacitance, Source Off: 12 pF
• Channel Type: N-Channel
• Current, Drain Cutoff: 1 nA
• Current, Drain, Saturation: 5 mA
• Current, Gate: –5 pA
• Current, Gate Operating: –6 nA
• Current, Gate Reverse: –1 nA
• Noise, Input Voltage: 3 nV/√Hz
• Noise, Voltage: 3 nV/√RZ
• On Resistance: 50 Ohms
• Package Type: TO-236 (SOT-23)
• Polarization: N-Channel
• Power Dissipation: 350 mW
• Resistance, Drain To Source On: 50 Ohms
• Resistance, On: 50 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Time, Turn-off: 15 ns
• Time, Turn-on: 2 ns
• Transconductance, Forward: 6 S
• Transistor Type: N-Channel
• Voltage, Breakdown, Gate To Source: –55 V
• Voltage, Gate To Source, Breakdown: –35 V
• Voltage, Gate To Source, Cut-off: –10 V
• Voltage, Gate To Source, Forward: 0.7 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

J/SST111 Series
Vishay Siliconix
Notes
a.
b.
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source Forward
Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
Switching
Turn-On Time
Turn-Off Time
www.vishay.com
7-2
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
Parameter
b
Symbol
V
V
r
V
(BR)GSS
r
I
DS(on)
t
t
I
ds(on)
GS(off)
I
C
D(off)
C
d(on)
GS(F)
d(off)
DSS
GSS
g
g
e
I
t
t
G
os
rss
iss
fs
r
n
f
_
V
V
V
V
V
V
V
V
I
V
V
V
V
DD
DD
Test Conditions
I
DS
DS
G
See Switching Circuit
V
GS
DG
DS
G
V
GS
DS
DG
DS
DS
GS
= –1 mA , V
DS
= 1 mA , V
= 0 V, V
= 0 V, V
= 10 V, V
= 10 V, V
= 5 V, V
= –15 V, V
= 15 V, I
= 0 V, V
= 15 V, V
= 20 V, I
= 20 V, I
= 10 V, I
= 0 V, I
=
f = 1 MHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
5
V, I
GS
GS
GS
DS
D
GS(H)
GS(H)
D
D
D
D
D
DS
DS
GS
= 0 mA
DS
= 10 mA
=
=
= 1 mA
= 1 mA
= 1 mA
= –10 V
= 1 mA
T
T
= 0.1 V
A
A
= 0 V
= 0 V
= 0 V
= 0 V
= 125_C
= 125_C
= 0 V
= 0 V
V
V
–0.005
Typ
0.005
–55
0.7
–3
–5
25
15
3
6
7
3
3
2
2
6
a
Min
–35
–3
20
J/SST111
Max
–10
–1
30
30
12
1
5
Min
–35
–1
5
J/SST112
Limits
Max
S-04028—Rev. E, 04-Jun-01
–1
50
50
12
–5
1
5
Document Number: 70232
Min
–35
2
J/SST113
Max Unit
100
100
–3
–1
12
1
5
mA
mS
nV
nA
pA
nA
mS
pF
ns
W
W
V
V
V
Hz
NCB