TP0610K-T1-E3 Siliconix / Vishay, TP0610K-T1-E3 Datasheet

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TP0610K-T1-E3

Manufacturer Part Number
TP0610K-T1-E3
Description
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10 Ohms; ID -185mA; TO-236 (SOT-23); PD 350mW; -55degc
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of TP0610K-T1-E3

Current, Drain
-185 mA
Gate Charge, Total
1.7 nC
Package Type
TO-236 (SOT-23)
Polarization
P-Channel
Power Dissipation
350 mW
Resistance, Drain To Source On
10 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
35 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
80 mS
Voltage, Breakdown, Drain To Source
-60 V
Voltage, Forward, Diode
-1.4 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP0610K-T1-E3
Manufacturer:
Vishay
Quantity:
2 350
Part Number:
TP0610K-T1-E3
Manufacturer:
VISHAY
Quantity:
4 521
Part Number:
TP0610K-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TP0610K-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
G
S
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Ordering Information: TP0610K-T1
V
1
2
DS
- 60
(V)
(SOT-23)
Top View
TO-236
6 at V
a
R
DS(on)
TP0610K-T1-E3 (Lead (Pb)-free)
TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)
b
GS
3
= - 10 V
a
D
(Ω)
a
Marking Code: 6Kwll
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
V
- 1 to - 3.0
P-Channel 60-V (D-S) MOSFET
GS(th)
(V)
A
I
D
= 25 °C, unless otherwise noted
- 185
(mA)
T
T
T
T
FEATURES
APPLICATIONS
BENEFITS
A
A
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• High-Side Switching
• Low On-Resistance: 6 Ω
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• 2000 V ESD Protection
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
A
A
= 100 °C
= 100 °C
= 25 °C
= 25 °C
Available
Memories, Transistors, etc.
®
Symbol
T
Power MOSFET
R
V
V
J,
I
P
DM
thJA
I
DS
GS
D
T
D
stg
- 55 to 150
Limit
- 185
- 115
- 800
± 20
- 60
350
140
350
Vishay Siliconix
TP0610K
°C/W
mW
Unit
mA
°C
V
1

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TP0610K-T1-E3 Summary of contents

Page 1

... Marking Code: 6Kwll 6K = Part Number Code for TP0610K Week Code ll = Lot Traceability Top View Ordering Information: TP0610K-T1 TP0610K-T1-E3 (Lead (Pb)-free) TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current b Pulsed Drain Current a Power Dissipation ...

Page 2

... TP0610K Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance ...

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