TP0610K-T1-E3 Siliconix / Vishay, TP0610K-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: TP0610K-T1-E3
• Description: MOSFET; P-Ch; VDSS -60V; RDS(ON) 10 Ohms; ID -185mA; TO-236 (SOT-23); PD 350mW; -55degc
• Manufacturer: Siliconix / Vishay

Specifications of TP0610K-T1-E3

• Current, Drain: -185 mA
• Gate Charge, Total: 1.7 nC
• Package Type: TO-236 (SOT-23)
• Polarization: P-Channel
• Power Dissipation: 350 mW
• Resistance, Drain To Source On: 10 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 35 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 80 mS
• Voltage, Breakdown, Drain To Source: -60 V
• Voltage, Forward, Diode: -1.4 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TP0610K
Vishay Siliconix
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
a
a
a
A
= 25 °C, unless otherwise noted
Symbol
R
V
I
t
t
I
C
I
DS(on)
C
V
GS(th)
D(on)
V
Q
C
Q
d(on)
d(off)
GSS
DSS
Q
g
oss
DS
SD
rss
iss
fs
gs
gd
g
I
V
D
GS
V
≅ - 200 mA, V
V
DS
DS
= - 10 V, I
V
V
= 0 V, V
V
V
V
= - 60 V, V
V
V
I
V
V
GS
DS
V
GS
GS
S
V
V
DS
V
GS
V
DS
DD
DS
DS
DS
DS
GS
= - 200 mA, V
DS
= - 10 V, I
= - 10 V, I
= - 10 V, V
= - 4.5 V, I
Test Conditions
= - 10 V, V
= - 30 V, V
= V
= 0 V, V
= - 25 V, R
= 0 V, V
= - 60 V, V
I
= - 25 V, V
= 0 V, I
= 0 V, V
D
D
GS
f = 1 MHz
≅ - 500 mA
GS
GEN
= - 500 mA, T
GS
= ± 10 V, T
, I
D
D
GS
GS
= 0 V, T
D
D
= - 10 V, R
GS
D
DS
= - 250 µA
GS
= - 10 µA
DS
= - 500 mA
= - 100 mA
L
= ± 20 V
GS
GS
= ± 10 V
= - 25 mA
GS
= ± 5 V
= 150 Ω
= - 4.5 V
= - 10 V
= - 15 V
= 0 V
= 0 V
= 0 V
J
J
= 85 °C
J
= 85 °C
G
=125 °C
= 10 Ω
- 600
Min.
- 60
- 50
- 1
80
Limits
Typ.
0.26
0.46
1.7
23
10
25
35
5
a
± 200
± 500
± 100
- 250
Max.
- 3.0
± 10
- 1.4
- 25
10
6
9
Unit
mA
mA
mS
nC
µA
pF
ns
Ω
V
V