SI4559EY-T1-E3 Siliconix / Vishay, SI4559EY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4559EY-T1-E3
• Description: MOSFET, Dual, Complementary, 60V, 4.5/3.1A, SO-8
• Manufacturer: Siliconix / Vishay

Specifications of SI4559EY-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part

www.vishay.com FaxBack 408-970-5600
2-4
Si4559EY
Vishay Siliconix
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
0.4
0.2
0.01
20
10
0.1
1
–50
2
1
0
10
–4
–25
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
0.2
J
V
= 175 C
SD
0
Single Pulse
0.4
– Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
– Temperature ( C)
0.6
50
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
–3
75
0.8
I
D
= 250 A
100
T
J
1.0
= 25 C
125
1.2
150
10
Square Wave Pulse Duration (sec)
–2
175
1.4
10
–1
0.10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
0.1
1
– Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
Time (sec)
4
t
1
A
= P
t
2
DM
Z
1
thJA
thJA
t
t
6
1
2
S-57253—Rev. D, 24-Feb-98
(t)
Document Number: 70167
= 62.5 C/W
10
I
D
= 4.5 A
8
10
30
10
30