SI4559EY-T1-E3 Siliconix / Vishay, SI4559EY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4559EY-T1-E3
• Description: MOSFET, Dual, Complementary, 60V, 4.5/3.1A, SO-8
• Manufacturer: Siliconix / Vishay

Specifications of SI4559EY-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part

Document Number: 70167
S-57253—Rev. D, 24-Feb-98
1.0
0.8
0.6
0.4
0.2
30
24
18
12
10
6
0
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 3.1 A
= 30 V
On-Resistance vs. Drain Current
1
V
V
GS
V
4
4
GS
DS
Q
= 10, 9, 8, 7, 6 V
Output Characteristics
= 4.5 V
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
2
– Drain Current (A)
Gate Charge
8
8
3
12
12
4
V
16
16
GS
5
= 10 V
5 V
4 V
3 V
20
20
6
1400
1200
1000
800
600
400
200
2.0
1.6
1.2
0.8
0.4
20
16
12
8
4
0
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
–25
rss
V
I
D
GS
10
= 3.1 A
V
V
= 10 V
DS
GS
C
0
T
Transfer Characteristics
oss
J
2
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
T
C
20
25
= –55 C
Capacitance
www.vishay.com FaxBack 408-970-5600
50
30
4
Vishay Siliconix
75
100
40
150 C
Si4559EY
25 C
6
125
C
iss
50
150
175
60
8
2-5