50MT060WHTAPBF Vishay PCS, 50MT060WHTAPBF Datasheet

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50MT060WHTAPBF

Manufacturer Part Number
50MT060WHTAPBF
Description
Half-Bridge IGBT, 600V 50A WARP 20-100 KHz, MTP
Manufacturer
Vishay PCS
Type
Warpr
Datasheet
1.50MT060WHTAPBF.pdf (6 pages)

Specifications of 50MT060WHTAPBF

Capacitance, Gate
7100 pF
Current, Collector
114 A
Energy Rating
2.39 mJ
Package Type
MTP
Polarity
N-Channel
Power Dissipation
658 W
Resistance, Thermal, Junction To Case
0.38 °C/W
Speed, Switching
60 to 100 kHz
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.3 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Document Number: 94468
Revision: 25-Sep-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
V
CE(on)
I
C
typical at V
at T
V
C
CES
= 25 °C
GE
= 15 V
MTP
For technical questions, contact: ind-modules@vishay.com
(Warp Speed IGBT), 114 A
"Half-Bridge" IGBT MTP
SYMBOL
600 V
114 A
2.3 V
V
V
V
I
I
I
P
ISOL
CM
CES
I
LM
I
FM
GE
C
F
D
T
T
T
Any terminal to case, t = 1 minute
T
T
C
C
C
C
C
= 25 °C
= 109 °C
= 109 °C
= 25 °C
= 100 °C
TEST CONDITIONS
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• ULE78996 approved
• Speed 60 to 100 kHz
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
reverse recovery
®
Vishay High Power Products
antiparallel diodes with ultrasoft
50MT060WHTAPbF
MAX.
2500
± 20
600
114
350
350
200
658
263
50
34
www.vishay.com
UNITS
W
V
A
V
RoHS
COMPLIANT
1

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50MT060WHTAPBF Summary of contents

Page 1

... 109 ° Any terminal to case minute ISOL ° 100 °C C For technical questions, contact: ind-modules@vishay.com 50MT060WHTAPbF Vishay High Power Products ® antiparallel diodes with ultrasoft MAX. UNITS 600 V 114 50 350 A 350 34 200 ± 2500 658 W 263 www.vishay.com RoHS COMPLIANT 1 ...

Page 2

... Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leaking current Diode forward voltage drop Gate to emitter leakage current SWITCHING CHARACTERISTICS (T PARAMETER Total gate charge (turn-on) Gate to emitter charge (turn-on) ...

Page 3

... A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads ° Fig Maximum Collector Current vs. Case Temperature For technical questions, contact: ind-modules@vishay.com 50MT060WHTAPbF Vishay High Power Products MIN. TYP. MAX ...

Page 4

... Vishay High Power Products 100 T - Junction Temperature (°C) J Fig Typical Collector to Emitter Voltage vs. Junction Temperature V = 400 100 200 O - Typical Gate Charge (nC) G Fig Typical Gate Charge vs. Gate to Emitter Votlage T = 150 ° 125 ° °C J 0.4 0.8 1 Forward Voltage Drop (V) FM Fig ...

Page 5

... Essential part number - Voltage rating (060 = 600 V) - Speed/Type (W = Warp IGBT) - Circuit configuration (H = Half bridge Thermistor - substrate Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com 50MT060WHTAPbF Vishay High Power Products Ω Ω Ω Ω Fig Electrical Diagram A PbF 7 8 http://www.vishay.com/doc?95175 www.vishay.com ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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