50MT060WHTAPBF Vishay PCS, 50MT060WHTAPBF Datasheet - Page 4

• Manufacturer Part Number: 50MT060WHTAPBF
• Description: Half-Bridge IGBT, 600V 50A WARP 20-100 KHz, MTP
• Manufacturer: Vishay PCS
• Type: Warpr

Specifications of 50MT060WHTAPBF

• Capacitance, Gate: 7100 pF
• Current, Collector: 114 A
• Energy Rating: 2.39 mJ
• Package Type: MTP
• Polarity: N-Channel
• Power Dissipation: 658 W
• Resistance, Thermal, Junction To Case: 0.38 °C/W
• Speed, Switching: 60 to 100 kHz
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.3 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

50MT060WHTAPbF
Vishay High Power Products
www.vishay.com
4
Fig. 3 - Typical Collector to Emitter Voltage vs.
0.4
20
0
V
Fig. 5 - Maximum Forward Voltage Drop vs.
cc
I
c
= 400 V
= 52 A
40
T
Fig. 4 - Typical Gate Charge vs.
V
O
Instantaneous Forward Current
J
FM
G
0.8
- Junction Temperature (°C)
100
- Typical Gate Charge (nC)
Gate to Emitter Votlage
- Forward Voltage Drop (V)
Junction Temperature
60
1.2
80
200
T
T
T
100
J
J
J
I
I
I
C
C
C
= 150 °C
= 125 °C
= 25 °C
1.6
For technical questions, contact: [e-mail]
= 20 A
= 100 A
= 50 A
120
300
2.0
(Warp Speed IGBT), 114 A
140
"Half-Bridge" IGBT MTP
160
400
2.4
Fig. 7 - Typical Reverse Recovery Current vs. dI
Fig. 6 - Typical Reverse Recovery Time vs. dI
100
100
100
V
R
Fig. 8 - Typical Stored Charge vs. dI
V
= 200 V
R
= 200V
I
I
F
F
V
= 50 A, T
= 50 A, T
R
= 200 V
I
F
= 50 A, T
dI
dI
dI
I
I
F
J
F
F
F
J
F
/dt - (A/µs)
/dt - (A/µs)
/dt - (A/µs)
I
= 125 ˚C
= 125 °C
= 50 A, T
= 50 A, T
F
= 50 A, T
J
= 25 ˚C
Document Number: 94468
J
J
= 25 °C
= 125 °C
J
= 25 °C
Revision: 25-Sep-08
F
/dt
1000
1000
1000
F
/dt
F
/dt