NTE2349 NTE Electronics, Inc., NTE2349 Datasheet
NTE2349
Manufacturer Part Number
NTE2349
Description
Transistor; TO3; NPN; 120; 120; 5 V; 50 A; 300 W; -55 to 200 degC; 0.584 degC/
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Currentr
Datasheet
1.NTE2349.pdf
(2 pages)
Specifications of NTE2349
Current, Continuous Collector
50 A
Current, Gain
400
Current, Input
2 A
Current, Output
50 A
Current, Output, Leakage
2
Device Dissipation
300 W
Gain, Dc Current, Maximum
18000 @ 25 A, 5 V
Gain, Dc Current, Minimum
1000 @ 25 A, 5 V
Package Type
TO-3
Polarity
NPN
Power Dissipation
300 W
Primary Type
Si
Resistance, Thermal, Junction To Case
0.584 °C⁄W
Temperature Range, Junction, Operating
-55 to 200 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
120 V (Min.)
Voltage, Collector To Base
120
Voltage, Collector To Emitter
120
Voltage, Collector To Emitter, Saturation
3.5 V
Voltage, Emitter To Base
5 V
Voltage, Input
5 V
Voltage, Output
120 V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE2349
Manufacturer:
AVX
Quantity:
23 000
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: h
D Diode Protection to Rated I
D Monolithic Construction
D Junction Temperature to +200 C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Lead Temperature (During Soldering, 10sec Max), T
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Emitter Leakage Current
Emitter Cutoff Current
Continuous
Peak
Derate Above 25 C @ T
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
NTE2349 (NPN) & NTE2350 (PNP)
CB
C
High Current, General Purpose
B
w
Silicon Darlington Transistors
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
h
/Built–In Base–Emitter Shunt Resistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
C
C
V
= 1000 (Min) @ I
= 400 (Min) @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
= +100 C
(BR)CEO
I
I
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CER
CEO
EBO
D
I
V
V
V
V
C
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CE
CE
BE
= 100mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 120V, R
= 120V, R
= 50V, I
= 5V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
Test Conditions
= 50A
C
= 25A
B
L
= 0
B
BE
= 0
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0
= 1k , T
= 1k
C
= +150 C
Min
120
–
–
–
–
Typ
–
–
–
–
–
–55 to +200 C
–55 to +200 C
Max
10
1.71W/ C
–
2
2
2
0.584 C
+275 C
300W
120V
120V
100A
Unit
mA
mA
mA
mA
50A
V
5V
2A
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NTE2349 Summary of contents
Page 1
... NTE2349 (NPN) & NTE2350 (PNP) High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain Diode Protection to Rated I ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Note 1. Pulse Test: Pulse Width B NPN .350 (8.89) .215 (5.45) .430 (10.92) = +25 C unless otherwise specified) C Symbol ...