NTE2349 NTE Electronics, Inc., NTE2349 Datasheet - Page 2

• Manufacturer Part Number: NTE2349
• Description: Transistor; TO3; NPN; 120; 120; 5 V; 50 A; 300 W; -55 to 200 degC; 0.584 degC/
• Manufacturer: NTE Electronics, Inc.
• Type: Amplifier, High Currentr

Specifications of NTE2349

• Current, Continuous Collector: 50 A
• Current, Gain: 400
• Current, Input: 2 A
• Current, Output: 50 A
• Current, Output, Leakage: 2
• Device Dissipation: 300 W
• Gain, Dc Current, Maximum: 18000 @ 25 A, 5 V
• Gain, Dc Current, Minimum: 1000 @ 25 A, 5 V
• Package Type: TO-3
• Polarity: NPN
• Power Dissipation: 300 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.584 °C⁄W
• Temperature Range, Junction, Operating: -55 to 200 °C
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Emitter: 120 V (Min.)
• Voltage, Collector To Base: 120
• Voltage, Collector To Emitter: 120
• Voltage, Collector To Emitter, Saturation: 3.5 V
• Voltage, Emitter To Base: 5 V
• Voltage, Input: 5 V
• Voltage, Output: 120 V

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
B
Parameter
.350 (8.89)
.215 (5.45)
NPN
(10.92)
.430
Emitter
.312 (7.93) Min
Symbol
V
V
Base
CE(sat)
BE(sat)
h
.135 (3.45) Max
300 s, Duty Cycle
FE
C
E
Schematic Diagram
C
I
I
I
I
I
I
C
C
C
C
C
C
= +25 C unless otherwise specified)
= 25A, I
= 50A, I
= 25A, I
= 50A, I
= 25A, V
= 50A, V
.875 (22.2)
Dia Max
(30.16)
1.187
Collector/Case
Test Conditions
B
B
B
B
(16.9)
.665
CE
CE
= 250mA
= 500mA
= 200mA
= 300mA
.061 (1.55) Max
= 5V
= 5V
.525 (13.35) R Max
2%.
B
.188 (4.8) R Max
.156 (3.96) Dia
(2 Holes)
Seating
Plane
PNP
1000
Min
400
–
–
–
–
Typ
–
–
–
–
–
–
C
E
18000
Max
2.5
3.5
3.0
4.5
–
Unit
V
V
V
V