NTE2399 NTE Electronics, Inc., NTE2399 Datasheet - Page 2

• Manufacturer Part Number: NTE2399
• Description: MOSFET; N-Ch; VDSS 1000V; RDS(ON) 0.5Ohm; ID 3.1A; TO-220; PD 125W; VGS +/-20V; Qg 80nC
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2399

• Channel Type: N-Channel
• Current, Drain: 3.1 A
• Fall Time: 29 ns (Typ.)
• Gate Charge, Total: 80 nC
• Mounting And Package Type: M3 Screw Mounting
• Operating And Storage Temperature: -55 to +150 °C
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 125 W
• Resistance, Drain To Source On: 0.5 Ohm
• Resistance, Thermal, Junction To Case: 1 °C⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 62 °C⁄W
• Time, Rise: 25 ns (Typ.)
• Time, Turn-off Delay: 89 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 2.1 Mhos
• Voltage, Breakdown, Drain To Source: 1000 V
• Voltage, Forward, Diode: 1.8 V
• Voltage, Gate To Source: ±20 V

Electrical Characteristics: (T
Source–Drain Ratings and Characteristics:
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width
Drain–to–Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain–to–Source On–Resistance
Gate Threshold Voltage
Forward Transconductance
Drain–to–Source Leakage Current
Gate–to–Source Forward Leakage
Gate–to–Source Reverse Leakage
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
Parameter
Parameter
300 s; duty cycle
J
= +25 C unless otherwise specified)
V
Symbol
V
R
Symbol
V
(BR)DSS
(BR)DSS
t
t
I
I
I
C
DS(on)
C
GS(th)
Q
Q
C
d(on)
d(off)
DSS
GSS
GSS
V
g
Q
L
L
I
Q
t
t
oss
SM
T
t
rss
I
t
iss
on
fs
gs
gd
D
r
f
S
SD
S
rr
g
J
rr
2%.
Note 1
T
Note 4
T
di/dt = 100A/ s, Note 4
Intrinsic turn–on time is neglegible (turn–on is dominated by L
V
Reference to +25 C, I
V
V
V
V
V
V
V
I
Note 4
V
R
Between lead, .250in. (6.0) mm from
package and center of die contact
V
D
J
J
DS
GS
GS
DS
DS
DS
GS
GS
DD
GS
D
= +25 C, I
= +25 C, I
= 3.1A, V
= 170 , Note 4
= 800V, V
= 0V, I
= 10V, I
= V
= 100V, I
= 1000V, V
= –20V
= 20V
= 500V, I
= 0V, V
GS
Test Conditions
Test Conditions
, I
D
DS
DS
D
D
S
F
= 250 A
D
D
GS
= 1.9A, Note 4
= 3.1A, V
= 3.1A,
= 250 A
= 400V, V
= 25V, f = 1MHz
= 1.9A, Note4
= 3.1A, R
GS
= 0V, T
= 0V
D
= 1mA
GS
J
GS
G
= +125 C
= 0V,
= 12 ,
= 10V,
1000
Min
2.0
2.1
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
140
980
4.5
7.5
1.4
Typ
410
12
25
89
29
50
1.3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–100
Max
0.50
100
500
100
Max
4.0
620
80
10
42
3.1
1.8
2.0
12
–
–
–
–
–
–
–
–
–
–
–
–
S
mhos
+L
V/ C
Unit
Unit
nC
nC
nC
nH
nH
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
A
V
D
A
A
C
)