NTE2399 NTE Electronics, Inc., NTE2399 Datasheet - Page 3
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NTE2399
Manufacturer Part Number
NTE2399
Description
MOSFET; N-Ch; VDSS 1000V; RDS(ON) 0.5Ohm; ID 3.1A; TO-220; PD 125W; VGS +/-20V; Qg 80nC
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2399.pdf
(3 pages)
Specifications of NTE2399
Channel Type
N-Channel
Current, Drain
3.1 A
Fall Time
29 ns (Typ.)
Gate Charge, Total
80 nC
Mounting And Package Type
M3 Screw Mounting
Operating And Storage Temperature
-55 to +150 °C
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
0.5 Ohm
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
25 ns (Typ.)
Time, Turn-off Delay
89 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
2.1 Mhos
Voltage, Breakdown, Drain To Source
1000 V
Voltage, Forward, Diode
1.8 V
Voltage, Gate To Source
±20 V
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
.420 (10.67)
Max
.250 (6.35)
Max
Drain/Tab
Source
(12.7)
(12.7)
.110 (2.79)
.500
Max
.500
Min