IRFP250PBF Vishay PCS, IRFP250PBF Datasheet
IRFP250PBF
Manufacturer Part Number
IRFP250PBF
Description
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.085Ohm; ID 30A; TO-247AC; PD 190W; VGS +/-20V
Manufacturer
Vishay PCS
Datasheet
1.IRFP250PBF.pdf
(2 pages)
Specifications of IRFP250PBF
Current, Drain
30 A
Gate Charge, Total
140 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
190 W
Resistance, Drain To Source On
0.085 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
70 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
12 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
2 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP250PBF
Manufacturer:
ON
Quantity:
5 000
Part Number:
IRFP250PBF
Manufacturer:
IR
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 30 A, dI/dt ≤ 190 A/µs, V
= 50 V, starting T
(Ω)
TO-247
a
G
J
D
= 25 °C, L = 683 µH, R
S
c
a
a
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
200
140
28
74
G
= 25 Ω, I
D
S
C
Power MOSFET
0.085
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 30 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFP250PbF
SiHFP250-E3
IRFP250
SiHFP250
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The
commercial-industrial applications where higher power
levels preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package because
of its isolated mounting hole. It also provides greater
creepage distance between pins to meet the requirements of
most safety specifications.
TO-220
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
package
IRFP250, SiHFP250
design,
is
- 55 to + 150
LIMIT
universially
300
± 20
200
120
410
190
1.5
5.0
1.1
30
19
30
19
10
low
d
Vishay Siliconix
on-resistance
preferred
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
for
1
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IRFP250PBF Summary of contents
Page 1
... TO-220 devices. The TO-247 is S similar but superior to the earlier TO-218 package because N-Channel MOSFET of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247 IRFP250PbF SiHFP250-E3 IRFP250 SiHFP250 = 25 °C, unless otherwise noted °C ...
Page 2
IRFP250, SiHFP250 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...