IRFP250PBF Vishay PCS, IRFP250PBF Datasheet - Page 2

• Manufacturer Part Number: IRFP250PBF
• Description: MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.085Ohm; ID 30A; TO-247AC; PD 190W; VGS +/-20V
• Manufacturer: Vishay PCS

Specifications of IRFP250PBF

• Current, Drain: 30 A
• Gate Charge, Total: 140 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 190 W
• Resistance, Drain To Source On: 0.085 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 70 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 12 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 2 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

IRFP250, SiHFP250
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
R
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
thCS
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
GS
GS
R
J
DS
T
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C, I
Reference to 25 °C, I
= 10 V
= 10 V
J
= 6.2 Ω, R
= 160 V, V
= 25 °C, I
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
0.24
DS
DS
DD
GS
DS
-
-
= 200 V, V
= V
= 100 V, I
= 0 V, I
V
= 50 V, I
F
V
V
GS
DS
= 30 A, dI/dt = 100 A/μs
D
S
GS
GS
I
GS
D
= 30 A, V
= 3.2 Ω, see fig. 10
= ± 20 V
, I
= 25 V,
= 30 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
= 250 µA
D
= 250 µA
D
I
GS
D
= 18 A
= 30 A,
= 18 A
D
= 0 V
GS
= 1 mA
J
DS
= 125 °C
G
G
= 0 V
= 160 V,
b
b
MAX.
D
S
b
0.65
D
S
b
40
-
MIN.
200
2.0
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
2800
0.27
780
250
360
5.0
4.6
16
86
70
62
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.085
S
250
140
120
540
4.0
2.0
6.9
25
28
74
30
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V