SI2305DS-T1-E3 Siliconix / Vishay, SI2305DS-T1-E3 Datasheet
SI2305DS-T1-E3
Manufacturer Part Number
SI2305DS-T1-E3
Description
MOSFET, Power; P-Ch; VDSS -8V; RDS(ON) 0.044Ohm; ID +/-3.5A; TO-236 (SOT-23); PD 1.25W
Manufacturer
Siliconix / Vishay
Datasheet
1.SI2305DS-T1-E3.pdf
(2 pages)
Specifications of SI2305DS-T1-E3
Current, Drain
±3.5 A
Gate Charge, Total
10 nC
Package Type
TO-236 (SOT-23)
Polarization
P-Channel
Power Dissipation
1.25 W
Resistance, Drain To Source On
0.044 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
55 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
8.5 S
Voltage, Breakdown, Drain To Source
-8 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2305DS-T1-E3
Manufacturer:
KONY
Quantity:
3 523
Part Number:
SI2305DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 5 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
V
DS
- 8
(V)
Ordering Information:
0.052 at V
0.071 at V
0.108 at V
G
S
r
DS(on)
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
1
2
J
a, b
= 150 °C)
GS
GS
GS
Si2305DS (A5)*
Si2305DS-T1
Si2305DS-T1-E3 (Lead (Pb)-free)
a
*Marking Code
(SOT-23)
(Ω)
Top View
= - 4.5 V
= - 2.5 V
= - 1.8 V
TO-236
3
a, b
D
A
I
± 3.5
D
± 3
± 2
= 25 °C, unless otherwise noted
Steady State
(A)
T
T
T
T
t ≤ 5 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
Symbol
Symbol
T
R
J
V
V
I
P
, T
I
DM
thJA
I
DS
GS
D
S
D
stg
®
Power MOSFETs:
Typical
130
- 55 to 150
Limit
± 3.5
± 2.8
± 12
- 1.6
1.25
± 8
0.8
- 8
Maximum
100
1.8 V Rated
Vishay Siliconix
Si2305DS
°C/W
Unit
Unit
°C
W
RoHS*
COMPLIANT
V
A
Available
Pb-free
1
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SI2305DS-T1-E3 Summary of contents
Page 1
... GS TO-236 (SOT-23 Top View Si2305DS (A5)* *Marking Code Si2305DS-T1 Ordering Information: Si2305DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... Si2305DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...