SI2305DS-T1-E3 Siliconix / Vishay, SI2305DS-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI2305DS-T1-E3
• Description: MOSFET, Power; P-Ch; VDSS -8V; RDS(ON) 0.044Ohm; ID +/-3.5A; TO-236 (SOT-23); PD 1.25W
• Manufacturer: Siliconix / Vishay

Specifications of SI2305DS-T1-E3

• Current, Drain: ±3.5 A
• Gate Charge, Total: 10 nC
• Package Type: TO-236 (SOT-23)
• Polarization: P-Channel
• Power Dissipation: 1.25 W
• Resistance, Drain To Source On: 0.044 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 8.5 S
• Voltage, Breakdown, Drain To Source: -8 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±8 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si2305DS
Vishay Siliconix
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
b
a
a
a
J
= 25 °C, unless otherwise noted
V
Symbol
V
r
(BR)DSS
I
DS(on)
t
t
I
I
C
D(on)
V
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
oss
t
SD
t
iss
rss
fs
gs
gd
r
f
g
V
I
D
DS
V
V
≅ - 1.0 A, V
DS
DS
= - 4 V, V
V
V
V
V
= - 8 V, V
= - 4 V, V
V
V
V
V
V
DS
DS
V
GS
I
DS
V
S
GS
GS
DS
DS
GS
DS
DD
= - 1.6 A, V
Test Conditions
≤ - 5 V, V
≤ - 5 V, V
= - 4.5 V, I
= V
= - 2.5 V, I
= - 1.8 V, I
= - 5 V, I
= 0 V, V
= 0 V, I
= - 8 V, V
= - 4 V, R
GS
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
D
= 0 V, T
= 0 V, f = 1 MHz
GS
GS
GS
D
= - 250 µA
= - 10 µA
D
GS
GS
D
D
= - 3.5 A
L
= - 3.5 A
= ± 8 V
= - 4.5 V
= - 2.5 V
= - 3 A
= - 2 A
= 4 Ω
= 0 V
= 0 V
J
D
= 55 °C
≅ - 3.5 A
G
= 6 Ω
- 0.45
Min
- 8
- 6
- 3
Limits
0.044
0.060
0.087
1245
Typ
375
210
8.5
10
13
25
55
19
2
2
± 100
0.052
0.071
0.108
Max
- 0.8
- 1.2
- 10
- 1
15
20
40
80
35
Unit
nC
nA
µA
pF
ns
Ω
V
A
S
V