HFA32PA120CPBF Vishay PCS, HFA32PA120CPBF Datasheet

HFA32PA120CPBF

Manufacturer Part Number

HFA32PA120CPBF

Description

Diode, HEXFRED, 1200V 16A, TO-247AC

Manufacturer

Vishay PCS

Datasheet

1.HFA32PA120CPBF.pdf (4 pages)

Specifications of HFA32PA120CPBF

Capacitance, Junction

40 pF

Configuration

Common Cathode

Current, Forward

32 A

Current, Surge

190 A

Package Type

TO-247AC

Power Dissipation

151 W

Primary Type

Rectifier

Resistance, Thermal, Junction To Case

0.83 K/W

Speed, Switching

Ultrafast

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-55 to +150 °C

Time, Recovery

30 ns

Voltage, Forward

3 V

Voltage, Reverse

1200 V

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

HFA32PA120CPBF

Quantity:

70 000

Current page: 1 of 4
Download datasheet (235Kb)

* Pb containing terminations are not RoHS compliant, exemptions may apply

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

RRM

(typical) per leg

at 16 A at 25 °C

(typical) per leg

(maximum)

TO-247AC

F(AV)

per leg

Ultrafast Soft Recovery Diode, 2 x 16 A

Anode

per device

Common

common

cathode

2 x 16 A

per leg

1200 V

260 nC

150 °C

Base

30 ns

3.0 V

5.8 A

Anode

SYMBOL

HEXFRED

FSM

FRM

, T

Stg

TEST CONDITIONS

= 100 °C

= 25 °C

= 100 °C

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA32PA120C is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 1200 V and 16 A per leg continuous current, the

HFA32PA120C is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

extremely low values of peak recovery current (I

does not exhibit any tendency to “snap-off” during the

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA32PA120C is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

portion of recovery. The HEXFRED features combine to

RRM

Vishay High Power Products

HFA32PA120CPbF

- 55 to + 150

VALUES

1200

190

151

product line features

UNITS

°C

RRM

RoHS*

COMPLIANT

Available

Pb-free

) and

Related parts for HFA32PA120CPBF

HFA32PA120CPBF Summary of contents

Page 1

... SYMBOL TEST CONDITIONS V R per leg 100 ° per device I FSM I FRM ° 100 ° Stg HFA32PA120CPbF Vishay High Power Products RRM rr ® product line features VALUES UNITS 1200 16 32 190 64 151 ° 150 Pb-free Available RoHS* COMPLIANT ) and RRM ...

Page 2

... HFA32PA120CPbF Vishay High Power Products ELECTRICAL SPECIFICATIONS PER LEG (T PARAMETER SYMBOL Cathode to anode V BR breakdown voltage Maximum forward voltage V FM Maximum reverse I RM leakage current Junction capacitance C Series inductance L S DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T PARAMETER SYMBOL t rr Reverse recovery time ...

Page 3

... HFA32PA120CPbF Vishay High Power Products ORDERING INFORMATION TABLE Device code HEXFRED Ultrafast Soft Recovery Diode 120 ® - HEXFRED family - Process designator Subs. electron irradiated B = Subs. platinum - Current rating ( Package outline (PA = TO-247, 3 pins) - Voltage rating (120 = 1200 V) - Configuration (C = Center tap common cathode) ...

Page 4

DIMENSIONS in millimeters and inches ( E/2 ( (b1, b3, b5) Planting (c) (b, ...

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