HFA32PA120CPBF Vishay PCS, HFA32PA120CPBF Datasheet - Page 4

• Manufacturer Part Number: HFA32PA120CPBF
• Description: Diode, HEXFRED, 1200V 16A, TO-247AC
• Manufacturer: Vishay PCS

Specifications of HFA32PA120CPBF

• Capacitance, Junction: 40 pF
• Configuration: Common Cathode
• Current, Forward: 32 A
• Current, Surge: 190 A
• Package Type: TO-247AC
• Power Dissipation: 151 W
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 0.83 K/W
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 30 ns
• Voltage, Forward: 3 V
• Voltage, Reverse: 1200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
SYMBOL
DIMENSIONS in millimeters and inches
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
A1
A2
D1
b1
b2
b3
b4
b5
c1
D
A
b
c
19.71
13.08
MIN.
MILLIMETERS
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
Planting
(2) R/2
0.10
(5) L1
2 x R
(2)
2 x b2
D
3 x b
M
(c)
B
C
C
MAX.
20.70
Section C - C, D - D, E - E
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
A
-
M
1
(b1, b3, b5)
(b, b2, b4)
2
b4
E
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
MIN.
(3)
E/2
(4)
INCHES
3
2 x e
S
c1
Base metal
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
D
L
-
See view B
NOTES
3
4
TO-247
D D E
A
A1
View B
C
A2
D
A
A
E
SYMBOL
C
FP1
D2
FK
FP
E1
L1
E
N
Q
R
S
e
L
C
Thermal pad
Ø K
15.29
13.72
14.20
0.452
MIN.
MILLIMETERS
0.51
3.71
3.56
5.31
Vishay High Power Products
D2
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
4. - Drain
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
4. - Collector
(6) Ø P
-
5.46 BSC
7.62 BSC
5.51 BSC
M
D
2.54
B
Outline Dimensions
M
A
MAX.
15.87
16.10
4.29
3.66
1.30
6.98
5.69
5.49
0.01
View A - A
-
(4)
E1
4
M
D
(Datum B)
B
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
0.020
0.602
0.540
0.559
0.146
0.209
0.178
MIN.
0.14
M
-
FP1
0.215 BSC
0.217 BSC
INCHES
0.010
D1 (4)
3
MAX.
0.051
0.625
0.634
0.169
0.144
0.275
0.224
0.216
-
NOTES
3
1