PIC16F74-I/L Microchip Technology Inc., PIC16F74-I/L Datasheet - Page 32

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PIC16F74-I/L

Manufacturer Part Number
PIC16F74-I/L
Description
44 PIN, 7 KB FLASH, 192 RAM, 33 I/O
Manufacturer
Microchip Technology Inc.
Datasheet

Specifications of PIC16F74-I/L

A/d Inputs
8-Channel, 8-Bit
Cpu Speed
5 MIPS
Eeprom Memory
0 Bytes
Input Output
33
Interface
I2C/SPI/USART
Memory Type
Flash
Number Of Bits
8
Package Type
44-pin PLCC
Programmable Memory
7K Bytes
Ram Size
192 Bytes
Speed
20 MHz
Timers
2-8-bit, 1-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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Part Number
Manufacturer
Quantity
Price
Part Number:
PIC16F74-I/L
Manufacturer:
Microchip Technology
Quantity:
10 000
Part Number:
PIC16F74-I/L
Manufacturer:
MICROCHIP
Quantity:
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PIC16F7X
3.3
A program memory location may be read by writing two
bytes of the address to the PMADR and PMADRH reg-
isters and then setting control bit RD (PMCON1<0>).
Once the read control bit is set, the microcontroller will
use the next two instruction cycles to read the data. The
data is available in the PMDATA and PMDATH regis-
ters after the second NOP instruction. Therefore, it can
be read as two bytes in the following instructions. The
PMDATA and PMDATH registers will hold this value
until the next read operation.
EXAMPLE 3-1:
TABLE 3-1:
DS30325B-page 30
Address
10Dh
10Fh
10Ch
10Eh
18Ch
Legend:
Note 1: This bit always reads as a ‘1’.
Required
Sequence
Reading the FLASH Program
Memory
x = unknown, u = unchanged, r = reserved, - = unimplemented read as '0'. Shaded cells are not used during FLASH access.
PMADR
PMADRH
PMDATA Data Register Low Byte
PMDATH
PMCON1
Name
BSF
BCF
MOVF
MOVWF
MOVF
MOVWF
BSF
BSF
NOP
NOP
BCF
MOVF
MOVF
REGISTERS ASSOCIATED WITH PROGRAM FLASH
Address Register Low Byte
FLASH PROGRAM READ
Bit 7
STATUS, RP1
STATUS, RP0
ADDRH, W
PMADRH
ADDRL, W
PMADR
STATUS, RP0
PMCON1, RD
STATUS, RP0
PMDATA, W
PMDATH, W
(1)
Bit 6
Data Register High Byte
Bit 5
;
; Bank 2
;
; MSByte of Program Address to read
;
; LSByte of Program Address to read
; Bank 3 Required
; EEPROM Read Sequence
; memory is read in the next two cycles after BSF PMCON1,RD
;
; Bank 2
; W = LSByte of Program PMDATA
; W = MSByte of Program PMDATA
Address Register High Byte
Bit 4
Bit 3
3.4
FLASH program memory has its own code protect
mechanism. External Read and Write operations by
programmers are disabled if this mechanism is
enabled.
The microcontroller can read and execute instructions
out of the internal FLASH program memory, regardless
of the state of the code protect configuration bits.
Bit 2
Operation During Code Protect
Bit 1
Bit 0
RD
 2002 Microchip Technology Inc.
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
1--- ---0 1--- ---0
Value on:
POR,
BOR
Value on
RESETS
all other

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