BAS40-05T/R Philips Semiconductors, BAS40-05T/R Datasheet - Page 6
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BAS40-05T/R
Manufacturer Part Number
BAS40-05T/R
Description
DIODE SCHOTTKY TAPE-7
Manufacturer
Philips Semiconductors
Datasheet
1.BAS40-05TR.pdf
(9 pages)
Specifications of BAS40-05T/R
Capacitance, Junction
5 pF
Configuration
Dual Common Cathode
Current, Forward
120 mA
Current, Reverse
10 μA
Current, Surge
200 mA
Package Type
SOT-23
Primary Type
Schottky Barrier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
380 mV
Voltage, Reverse
40 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Philips Semiconductors
4. Marking
5. Limiting values
BAS40_1PSXXSB4X_SER_7
Product data sheet
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
1PS70SB40
1PS76SB40
1PS79SB40
BAS40
BAS40H
BAS40L
BAS40W
1PS70SB44
BAS40-04
BAS40-04W
1PS70SB45
Symbol
Per diode
V
I
I
I
T
T
T
F
FRM
FSM
j
amb
stg
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
T
j
= 25 C prior to surge.
Marking codes
Limiting values
Parameter
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
junction temperature
ambient temperature
storage temperature
BAS40 series; 1PSxxSB4x series
Marking code
6*3
S4
T
43*
AJ
S6
63*
6*4
44*
64*
6*5
[1]
Conditions
t
t
p
p
1 s;
10 ms
Type number
1PS75SB45
BAS40-05
BAS40-05W
1PS70SB46
BAS40-06
BAS40-06W
BAS40-07
BAS40-07V
BAS40-05V
1PS88SB48
BAS40XY
0.5
General-purpose Schottky diodes
[1]
Min
-
-
-
-
-
65
65
Marking code
45
45*
65*
6*6
46*
66*
47*
67
65
8*5
40*
Max
40
120
120
200
150
+150
+150
[1]
Unit
V
mA
mA
mA
C
C
C
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