BAS40-05T/R Philips Semiconductors, BAS40-05T/R Datasheet - Page 7
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BAS40-05T/R
Manufacturer Part Number
BAS40-05T/R
Description
DIODE SCHOTTKY TAPE-7
Manufacturer
Philips Semiconductors
Datasheet
1.BAS40-05TR.pdf
(9 pages)
Specifications of BAS40-05T/R
Capacitance, Junction
5 pF
Configuration
Dual Common Cathode
Current, Forward
120 mA
Current, Reverse
10 μA
Current, Surge
200 mA
Package Type
SOT-23
Primary Type
Schottky Barrier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
380 mV
Voltage, Reverse
40 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Philips Semiconductors
6. Thermal characteristics
7. Characteristics
BAS40_1PSXXSB4X_SER_7
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
[1]
Symbol
Per device
R
R
Symbol
Per diode
V
I
C
R
amb
F
th(j-a)
th(j-sp)
d
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Soldering point at pins 2, 3, 5 and 6.
Pulse test: t
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
p
SOT23
SOT143B
SOT363 (1PS88SB48)
SOT416
SOT666 (BAS40-05V)
SOT666 (BAS40-07V)
SOD123F
SOD323
SOD523
SOD882
SOT323
SOT363 (BAS40XY)
300 s;
BAS40 series; 1PSxxSB4x series
0.02.
Conditions
I
I
I
V
V
V
F
F
F
R
R
R
= 1 mA
= 10 mA
= 40 mA
= 30 V
= 40 V
= 0 V; f = 1 MHz
Conditions
in free air
General-purpose Schottky diodes
[1]
[2]
[2]
[2]
[2]
[2]
[3]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
500
500
416
833
225
416
330
450
450
500
625
260
Max
380
500
1
1
10
5
Unit
mV
mV
V
pF
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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A
A