SKM 100 GB 063D Sindopower / Semikron, SKM 100 GB 063D Datasheet - Page 2

• Manufacturer Part Number: SKM 100 GB 063D
• Description: IGBT; D-61; IGBT; 600 V, 130 A; 600 V; 130 A; 600 V; -40 to 150 degC
• Manufacturer: Sindopower / Semikron
• Type: Standardr

Specifications of SKM 100 GB 063D

• Capacitance, Gate: 5.6 nF
• Current, Collector: 130 A
• Energy Rating: 7 mJ
• Fall Time: 35 nS (Typ.)
• Operating And Storage Temperature: -40 to 150 °C
• Package Type: D61
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.27 K⁄W (Max.)
• Switching Loss: 4 mJ (Typ.)
• Time, Rise: 40 nS (Typ.)
• Transistor Type: IGBT
• Voltage And Current Rating: 600 V, 130 A
• Voltage, Breakdown, Collector To Emitter: 600 V
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.1 V
• Voltage, Gate Threshold, Range: 4.5 V (Min.) to 6.5 V (Max.)
• Voltage, Saturation, Collector To Emitter: 600 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 100GB063D
Superfast NPT-IGBT
Module
SKM 100GB063D
Features
Typical Applications
2
SEMITRANS
GB
®
2
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Characteristics
Symbol
Inverse Diode
Module
05-09-2006 SEN
Conditions
min.
typ.
© by SEMIKRON
max.
Units