SKM 100 GB 063D Sindopower / Semikron, SKM 100 GB 063D Datasheet - Page 3

• Manufacturer Part Number: SKM 100 GB 063D
• Description: IGBT; D-61; IGBT; 600 V, 130 A; 600 V; 130 A; 600 V; -40 to 150 degC
• Manufacturer: Sindopower / Semikron
• Type: Standardr

Specifications of SKM 100 GB 063D

• Capacitance, Gate: 5.6 nF
• Current, Collector: 130 A
• Energy Rating: 7 mJ
• Fall Time: 35 nS (Typ.)
• Operating And Storage Temperature: -40 to 150 °C
• Package Type: D61
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.27 K⁄W (Max.)
• Switching Loss: 4 mJ (Typ.)
• Time, Rise: 40 nS (Typ.)
• Transistor Type: IGBT
• Voltage And Current Rating: 600 V, 130 A
• Voltage, Breakdown, Collector To Emitter: 600 V
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.1 V
• Voltage, Gate Threshold, Range: 4.5 V (Min.) to 6.5 V (Max.)
• Voltage, Saturation, Collector To Emitter: 600 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 100GB063D
Superfast NPT-IGBT
Module
SKM 100GB063D
Features
Typical Applications
3
SEMITRANS
GB
®
2
Z
Symbol
Z
Z
th
th(j-c)l
th(j-c)D
05-09-2006 SEN
Conditions
Values
© by SEMIKRON
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