MMBT2907ALT1XT Infineon Technologies, MMBT2907ALT1XT Datasheet - Page 2

• Manufacturer Part Number: MMBT2907ALT1XT
• Description: AF TRANS, SOT 23, 3K T&R WITH MMBT LABEL
• Manufacturer: Infineon Technologies
• Type: Switchingr

Specifications of MMBT2907ALT1XT

• Current, Collector: 600 mA
• Current, Gain: 100
• Frequency: 200 MHz
• Package Type: SOT-23
• Polarity: PNP
• Power Dissipation: 330 mW
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 1.6 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage-
I
I
1
C
C
E
C
C
C
C
C
C
C
C
C
Puls test: t
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 µA, I
= 100 µA, V
= 1 mA, V
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 5 V, I
= 50 V, I
= 50 V, I
300µs, D = 2%
C
C
E
CE
B
E
E
= 0
CE
= 0
= 0
B
B
B
B
CE
= 0
= 0
= 0 , T
CE
CE
1)
= 10 V
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 10 V
= 10 V
= 10 V
= 10 V
A
= 150 °C
A
1)
= 25°C, unless otherwise specified
1)
2
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
SMBT2907A/MMBT2907A
min.
100
100
100
75
50
60
60
5
-
-
-
-
-
-
-
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
0.01
300
0.4
1.6
1.3
2.6
10
10
-
-
-
-
-
-
-
Unit
V
µA
nA
-
V