SI5933DC-T1-E3 Siliconix / Vishay, SI5933DC-T1-E3 Datasheet
SI5933DC-T1-E3
Specifications of SI5933DC-T1-E3
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SI5933DC-T1-E3 Summary of contents
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... Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71238 S-50366—Rev. D, 28-Feb-05 I (A) Q (Typ −3.6 −3.0 5.1 −2.4 Marking Code Lot Traceability and Date Code Part # Code Ordering Information: Si5933DC-T1 Si5933DC-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 85_C A ...
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... Si5933DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... J 1 0.0 0.2 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Document Number: 71238 S-50366—Rev. D, 28-Feb- 4 25_C J 1.0 1.2 1.4 Si5933DC Vishay Siliconix Capacitance 800 C iss 600 400 200 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si5933DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...