SI5933DC-T1-E3 Siliconix / Vishay, SI5933DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5933DC-T1-E3
• Description: MOSFET, DUAL, 20V, 3.6A, 2.1W, 1206-8
• Manufacturer: Siliconix / Vishay

Specifications of SI5933DC-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part

Document Number: 71238
S-50366—Rev. D, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 2.7 A
On-Resistance vs. Drain Current
= 10 V
1
2
V
SD
Q
T
0.4
g
J
− Source-to-Drain Voltage (V)
V
I
= 150_C
− Total Gate Charge (nC)
D
2
GS
− Drain Current (A)
V
Gate Charge
= 1.8 V
4
GS
0.6
= 2.5 V
3
0.8
6
4
1.0
T
V
J
GS
= 25_C
8
= 4.5 V
5
1.2
1.4
10
6
800
600
400
200
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
I
−25
D
GS
= 2.7 A
= 4.5 V
1
4
T
V
V
0
J
GS
DS
C
− Junction Temperature (_C)
oss
C
− Gate-to-Source Voltage (V)
iss
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
50
I
D
= 2.7 A
12
3
75
Si5933DC
100
16
www.vishay.com
4
125
150
20
5
3