SI9912DB Vishay, SI9912DB Datasheet - Page 6

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SI9912DB

Manufacturer Part Number
SI9912DB
Description
MOSFET & Power Driver ICs SMD SI9912 Kit
Manufacturer
Vishay
Datasheet

Specifications of SI9912DB

Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Si9912
Vishay Siliconix
THEORY OF OPERATION
Break-Before-Make Function
The Si9912 has an internal break-before-make function to
ensure that both high-side and low-side MOSFETs are not
turned on at the same time. The high-side drive (OUT
turn on until the low-side gate drive voltage (measured at the
OUT
MOSFET is turned off. The low-side drive (OUT
on until the voltage at the MOSFET half-bridge output
(measured at the V
the high-side MOSFET is turned off.
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
L
pin) is less than V
−1
−2
−3
−4
−5
−1
−2
−3
−4
−5
0
0
−50
−50
See Figure 3
−25
−25
S
pin) is less than V
V
V
OUT(H+)
OUT(L+)
0.5 A
1 A
BBM
2 A
0
0
Temperature (_C)
Temperature (_C)
, thus ensuring that the low-side
vs. Temperature
vs. Temperature
25
25
See Figure 3
BBM
50
50
, thus ensuring that
0.5 A
1.5 A
1 A
75
75
L
) will not turn
H
) will not
100
100
Under Voltage Lockout Function
The Si9912 has an internal under-voltage lockout feature to
prevent driving the MOSFET gates when the supply voltage (at
V
(V
on without sufficient gate voltage to ensure they are fully on.
There is hysteresis included in this feature to prevent lockout
from cycling on and off.
DD
UVL
) is less than the under-voltage lockout specification
). This prevents the output MOSFETs from being turned
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
−50
−50
See Figure 3
See Figure 3
−25
−25
1.5 A
0.5 A
2 A
2 A
1 A
V
V
OUT(H−)
OUT(L−)
0
0
Temperature (_C)
Temperature (_C)
vs. Temperature
vs. Temperature
25
25
S-40134—Rev. B, 16-Feb-04
Document Number: 71311
50
50
75
75
0.5 A
1.5 A
1 A
100
100

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