MAX8523EEE Maxim Integrated Products, MAX8523EEE Datasheet - Page 6

• Manufacturer Part Number: MAX8523EEE
• Description: MOSFET & Power Driver ICs Gate Driver
• Manufacturer: Maxim Integrated Products

Specifications of MAX8523EEE

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

High-Speed, Dual-Phase Gate Driver for
Multiphase, Step-Down Converters
Figure 1. MAX8523 Functional Diagram
When V
and DL_ are held low. Once V
threshold and PWM_ is low, DL_ is kept high and DH_
is kept low. This prevents output from rising before a
valid PWM signal is applied.
V
circuit. To avoid malfunctions due to the switching
noise on the DH_, DL_, and LX_ pins, RC decoupling is
recommended for the V
(R1) from the supply voltage to the V
(C7) capacitor from the V
6
CC
_______________________________________________________________________________________
provides the supply voltage for the internal logical
CC
is below the UVLO threshold (3.5V typ), DH_
Undervoltage Lockout (UVLO)
CC
CC
pin to PGND1.
pin. Place a 10Ω resistor
PWM2
PWM1
V
DLY
CC
CC
V
is above the UVLO
CC
CC
MAX8523
PROGRAM
DELAY
PGND1
pin and a 0.1µF
UVLO
Decoupling
PHASE2
PHASE1
DELAY
LOGIC
LX1 LOW
DETECT
LX2 LOW
DETECT
The MAX8523 uses a bootstrap circuit to generate the
floating supply voltages for the high-side drivers (DH_).
The selected high-side MOSFET determines appropri-
ate boost capacitance values, according to the follow-
ing equation:
where Q
MOSFET and ∆V
the high-side MOSFET drive. Choose ∆V
0.2V when determining the C
capacitors should be used for C
DLLO
DHON
DHLO
DLON
DLLO
DHON
DHLO
DLON
GATE
is the total gate charge of the high-side
BST
C
BST
is the voltage variation allowed on
BST1
DH1
LX1
PV1
DL1
PGND1
BST2
DH2
LX2
PV2
DL2
PGND2
Boost Capacitor Selection
=
Q
∆
GATE
V
BST
BST
3
and C
. Low-ESR ceramic
4
.
BST
= 0.1V to