IXBX64N250 IXYS, IXBX64N250 Datasheet
IXBX64N250
Specifications of IXBX64N250
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IXBX64N250 Summary of contents
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... 0.8 • CES CE CES 0V ± 25V GES 15V, Note 1 CE(sat) C C110 GE © 2010 IXYS CORPORATION, All Rights Reserved IXBK64N250 IXBX64N250 Maximum Ratings 2500 = 1MΩ 2500 GE ±25 ±35 156 120 64 600 = 1Ω 160 < 0.8 • CES 10 735 -55 ... +150 150 -55 ... +150 300 260 1 ...
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... E 15.75 e 5.45 BSC L 19.81 L1 3.81 Q 5.59 R 4.32 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405 B2 6,759,692 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXBK64N250 IXBX64N250 Terminals Gate 2 - Collector 3 - Emitter 4 - Collector Inches Max. Min. Max. 5.13 .190 .202 2.89 .100 .114 2.10 .079 .083 1.42 .044 .056 2.69 ...
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... V - Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I = 256A C 128A 64A Volts GE Fig. 6. Input Admittance T = 125ºC J 3.5 4.0 4.5 5.0 5 Volts GE IXBX64N250 = 125º 25V GE 20V 15V 10V 5V 4.0 4.5 5.0 5 25º 25ºC - 40ºC 6.0 6.5 7.0 ...
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... Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25º 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 Volts F Fig. 10. Capacitance MHz Volts CE Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXBK64N250 IXBX64N250 T = 125ºC J 2.0 2.2 2.4 2.6 2.8 C ies C oes C res 0 ...
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... Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance I = 64A, 128A, 256A 125º 1250V Ohms G IXBK64N250 IXBX64N250 200 220 240 260 300 I = 64A 285 C 270 255 240 225 210 195 180 165 150 105 115 125 700 600 500 400 300 ...