IXBX64N250 IXYS, IXBX64N250 Datasheet - Page 4

• Manufacturer Part Number: IXBX64N250
• Description: MOSFET & Power Driver ICs 2500V 64A
• Manufacturer: IXYS

Specifications of IXBX64N250

• Vces, (v): 2500
• Ic25, Tc=25°c, (a): 75
• Ic90, Tc=90°c, (a): 64
• Vce(sat), Typ, Tj=25°c, (v): 3.0
• Tf Typ, Tj=25°c, (ns): 170
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.17
• Package Style: PLUS247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
100
90
80
70
60
50
40
30
20
10
16
14
12
10
80
60
40
20
0
8
6
4
2
0
0
250
0
0
V
I
I
C
G
CE
T
R
dv / dt < 10V / ns
500
50
J
= 64A
= 10mA
G
= 600V
= 125ºC
20
= 1Ω
Fig. 11. Reverse-Bias Safe Operating Area
100
750
40
Fig. 7. Transconductance
1000
150
Fig. 9. Gate Charge
Q
G
I
C
- NanoCoulombs
60
- Amperes
1250
200
V
T
CE
J
= - 40ºC
- Volts
1500
250
80
25ºC
125ºC
1750
300
100
2000
350
120
2250
400
2500
140
450
100,000
10,000
1,000
200
180
160
140
120
100
1.000
0.100
0.010
0.001
80
60
40
20
100
0
10
0.00001
0.4
0
0.6
f = 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
5
0.0001
0.8
1.0
10
1.2
0.001
Fig. 10. Capacitance
Pulse Width - Seconds
15
1.4
V
V
T
F
CE
J
- Volts
1.6
= 25ºC
0.01
- Volts
20
1.8
25
IXBK64N250
IXBX64N250
2.0
0.1
2.2
30
T
C res
C ies
C oes
J
= 125ºC
2.4
1
35
2.6
2.8
40
10