ZXGD3102T8TA Diodes Inc, ZXGD3102T8TA Datasheet
ZXGD3102T8TA
Specifications of ZXGD3102T8TA
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ZXGD3102T8TA Summary of contents
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... GND GATEH SM8 Ordering information Device Status Package ZXGD3102T8TA Active Issue 4, May 2009 © Diodes Incorporated 2008 A Product Line of Diodes Incorporated Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors’ output voltage is then ...
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... Thermal resistance Parameter Junction to ambient (*) Junction to case (†) Notes: (*) Mounted on minimum 1oz copper on FR4 PCB in still air conditions (†) Junction to solder point at the end of the lead 5 and 6 ESD Rating Model Human body Machine Issue 4, May 2009 ©Diodes Incorporated 2008 Symbol SOURCE I ...
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... Input and supply characteristics Operating current Gate Driver Turn-off Threshold Voltage(**) GATE output voltage (**) GATEH peak source current GATEL peak sink current Notes: (**) GATEH connected to GATEL (*) R = 100kΩ O/ 100kΩ O/ Issue 4, May 2009 ©Diodes Incorporated 2008 = 25°C; A Conditions Symbol ≤ -100m ≥ 1V, (*) ≥ 0V, (*) G(off) V ...
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... This is the ground reference point. Connect to the OR’ing MOSFET Source terminal Bias This pin is connected BIAS 1.2 times I See Note 1 Drain connection 8 DRAIN This pin connects directly to the OR’ing MOSFET Drain terminal Note 1- BIAS and REF pins should be assumed GND+0.7V. Issue 4, May 2009 ©Diodes Incorporated 2008 = 25°C; A =3.9k REF 3.3nF ...
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... GATEL, turning the device off. This prevents high reverse current flow from the load to the input power supply which could pull down the common bus voltage causing catastrophic system failure MOSFET Drain Voltage MOSFET Gate Voltage MOSFET Gate Current Issue 4, May 2009 ©Diodes Incorporated 2008 5 ZXGD3102T8 www.diodes.com ...
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... R =3.9k -40 CC BIAS Ω R =3.9k I =1mA REF SINK - -50 -50 - Temperature (°C) Turn-Off Voltage vs Temperature Issue 4, May 2009 ©Diodes Incorporated 2008 Typical characteristics -40° 25° 125° Ω R =3.3k BIAS 2 Ω R =100k LOAD 0 -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0. Transfer Characteristic ...
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... R =3.9k CC BIAS Ω R =3.9k C =1.0nF REF BIAS 0.16 C =3.3nF R =100k LOAD LOAD 0.14 0.12 0.10 0.08 -50 - Temperature (°C) Speed vs Temperature Issue 4, May 2009 ©Diodes Incorporated 2008 Typical characteristics =10V CC Ω R =3.9k BIAS 6 Ω R =3.9k REF C =3.3nF LOAD 4 Ω R =100k LOAD 0.0 Switch-Off Speed 5 ...
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... R =3.9k C =1.0nF REF BIAS C =3.3nF R =100k 0.16 LOAD LOAD 0.14 0.12 0.10 0.08 -50 - Temperature (°C) Speed vs Temperature Issue 4, May 2009 ©Diodes Incorporated 2008 Typical characteristics 10 V =10V 8 CC Ω R =3.3k BIAS Ω R =3.9k 6 REF C =1.0nF BIAS 4 C =3.3nF LOAD Ω R ...
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... For best thermal performance, the PCB heat path from pins 5 and 6 needs attention. The area of copper connected to pins 5 and 6 should be maximised. Issue 4, May 2009 ©Diodes Incorporated 2008 and ground due to the possibility of high peak CC supply voltage to the ZXGD3102 and also to limit the ...
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... Blocking diodes protect the load from a faulty power supply affecting the load voltage. • The load can be tens of amps. • Dissipation in the diodes can be high! • The ZXGD3102 is designed to switch the low on-resistance MOSFETs used to replace the blocking diodes. Figure 1: OR’ING with Schottky Diodes Issue 4, May 2009 ©Diodes Incorporated 2008 10 ZXGD3102T8 www.diodes.com ...
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... Figure 2: Negative telecom active OR’ing evaluation Issue 4, May 2009 ©Diodes Incorporated 2008 11 ZXGD3102T8 www.diodes.com ...
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... OR’ing MOSFET 30V G POWER SUPPLY A OR’ing MOSFET 30V G POWER SUPPLY B Figure 3: Positive rail power supply active OR’ing evaluation Issue 4, May 2009 ©Diodes Incorporated 2008 Vcc REF BIAS REF BIAS Vcc ZXGD3102 DRAIN C BIAS GATEL GATEH GND Vcc REF BIAS REF ...
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... Issue 4, May 2009 ©Diodes Incorporated 2008 Figure 4: Test Circuit Figure 5: Timing Diagram 13 ZXGD3102T8 www.diodes.com ...
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... Issue 4, May 2009 ©Diodes Incorporated 2008 14 ZXGD3102T8 www.diodes.com ...
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... United States, international or foreign trademarks. Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A ...