ZXGD3102T8TA Diodes Inc, ZXGD3102T8TA Datasheet - Page 3

• Manufacturer Part Number: ZXGD3102T8TA
• Description: MOSFET & Power Driver ICs BIPOLAR TRANSISTOR GATE DRIVER NPN/PNP SMB GREEN 1K
• Manufacturer: Diodes Inc
• Type: High Side/Low Sider

Specifications of ZXGD3102T8TA

• Rise Time: 5100 ns
• Fall Time: 110 ns
• Supply Voltage (min): 5 V
• Supply Current: 5.2 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Number Of Outputs: 1

DC Electrical characteristics at T
V
DC Electrical Characteristics at T
V
Notes:
(**) GATEH connected to GATEL
(*) R
( ) R
Issue 4, May 2009
©Diodes Incorporated 2008
Parameter
Input and supply characteristics
Operating current
Gate Driver
Turn-off Threshold Voltage(**)
GATE output voltage (**)
GATEH peak source current
GATEL peak sink current
Parameter
Input and supply characteristics
Operating current
Gate Driver
Turn-off Threshold Voltage(**)
GATE output voltage (**)
GATEH peak source current
GATEL peak sink current
CC
CC
= 10V; R
= 10V; R
H
L
= 100kΩ, R
= 100kΩ, R
BIAS
BIAS
= 3.3kΩ; R
= 3.9kΩ; R
H
L
= O/C; R
= O/C; R
REF
REF
H
L
=3.9kΩ
=3.9kΩ
needed only for characterization purposes, not in the application
needed only for characterization purposes, not in the application
A
A
Symbol
Symbol
I
I
= 25°C;
SOURCE
= 25°C;
SOURCE
V
V
I
I
I
V
SINK
I
V
SINK
V
V
G(off)
G(off)
OP
OP
G
G
T
T
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D
D
G
D
D
D
D
D
GH
GL
D
D
G
D
D
D
D
D
GH
GL
≤ -100m V
≥ 0V
≥ 0V, (*)
= -60mV, ( )
= -80mV, ( )
= -100mV, ( )
= -140mV, ( )
≤ -100m V ( )
≥ 0V (*)
≥ 0V, (*)
= -60mV, ( )
= -80mV, ( )
= -100mV, ( )
= -140mV, ( )
= 1V, (*)
= 5V
= 1V, (*)
= 5V
= 1V
= 1V
3
Conditions
Conditions
Min.
-55
Min.
3.5
6.5
8.0
8.5
5
-
-
-
-50
4.1
6.5
8.0
8.5
5
-
-
-
0.57
Typ
2.4
4.8
-29
6.5
8.5
8.8
9.4
0.58
2
Typ
-
-24
2.4
5.2
8.5
9.4
7
9
2
-
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ZXGD3102T8
Max.
Max.
0
1
-
-
-
-
-
-
-
-
0
1
-
-
-
-
-
-
-
-
Unit
mA
mV
V
A
A
Unit
mV
mA
V
A
A