NAND512W3A2DN6E Micron Technology Inc, NAND512W3A2DN6E Datasheet - Page 41

• Manufacturer Part Number: NAND512W3A2DN6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DN6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

NAND512xxA2D, NAND01GxxA2C
Figure 24. Page read A/ read B operation AC waveforms
RB
I/O
CL
AL
W
E
R
Command
00h or
Code
01h
cycle 1
Add.N
tWLWL
Address N Input
cycle 2
Add.N
cycle 3
Add.N
tWHBL
tWHBH
tBLBH1
cycle 4
Add.N
Busy
tRLRH
from Address N to Last Byte or Word in Page
Data
tALLRL2
N
Data
N+1
(Read Cycle time)
Data Output
tRLRL
Data
N+2
DC and AC parameters
tRHQX
tEHQX
tEHQZ
tRHQZ
Data
Last
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