NAND512W3A2DN6E Micron Technology Inc, NAND512W3A2DN6E Datasheet - Page 44

• Manufacturer Part Number: NAND512W3A2DN6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DN6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
Figure 27. Block erase AC waveforms
Figure 28. Reset AC waveforms
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RB
I/O
W
AL
CL
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
tWHBL
cycle 3
Add.
(Reset Busy time)
tBLBH4
Confirm
Code
D0h
Block Erase
(Erase Busy time)
tBLBH3
NAND512xxA2D, NAND01GxxA2C
70h
Read Status Register
SR0
ai08043
ai08038b