DS1248Y-70+ Dallas Semiconductor, DS1248Y-70+ Datasheet - Page 5

• Manufacturer Part Number: DS1248Y-70+
• Description: PHNTHM RTC MOD 128K X 8 70NS
• Manufacturer: Dallas Semiconductor

Specifications of DS1248Y-70+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 85 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 1024K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 128K×8
• Package Type: EDIP
• Temperature, Operating: 0 to +70 °C
• Time, Access: 70 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5.3 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

PHANTOM CLOCK AC ELECTRICAL CHARACTERISTICS
Over the Operating Range (5V)
Read Cycle Time
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
Read Recovery
Write Cycle Time
Write Pulse Width
Write Recovery
Data Setup Time
Data Hold Time
CE Pulse Width
RST Pulse Width
POWER-DOWN/POWER-UP TIMING
Over the Operating Range (3.3V)
CE at V
V
V
V
V
V
CE at V
(T
Expected Data-Retention Time
Warning: Under no circumstances are negative undershoots of any amplitude allowed when device
is in battery-backup mode.
CC
PF(min)
CC
CC
PF(min)
A
= +25°C)
Slew from V
Slew from V
Slew from V
( CE at V
(CE at V
IH
IH
PARAMETER
PARAMETER
PARAMETER
before Power-Down
after Power-Up
PF
PF
PF(max)
PF(min)
PF(max)
)
)
to V
to
to
SO
SYMBOL
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ODO
t
t
t
COE
t
t
OEE
REC
RST
WC
WR
CW
OD
WP
DH
t
RC
CO
OE
RR
DS
PD
t
DR
FB
R
F
11 of 18
MIN
MIN
MIN
300
1.5
65
10
65
55
10
30
60
65
10
10
5
5
0
0
0
TYP
TYP
TYP
MAX
MAX
MAX
2.5
55
55
25
25
UNITS
UNITS
UNITS
years
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
NOTES
NOTES
10
5
5
3
4
4
9