DS1248Y-70+ Dallas Semiconductor, DS1248Y-70+ Datasheet - Page 6

• Manufacturer Part Number: DS1248Y-70+
• Description: PHNTHM RTC MOD 128K X 8 70NS
• Manufacturer: Dallas Semiconductor

Specifications of DS1248Y-70+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 85 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 1024K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 128K×8
• Package Type: EDIP
• Temperature, Operating: 0 to +70 °C
• Time, Access: 70 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5.3 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

MEMORY AC ELECTRICAL CHARACTERISTICS
Over the Operating Range (3.3V)
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time from WE
PHANTOM CLOCK AC ELECTRICALCHARACTERISTICS
Over the Operating Range (3.3V)
Read Cycle Time
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
Read Recovery
Write Cycle Time
Write Pulse Width
Write Recovery
Data Setup Time
Data Hold Time
CE Pulse Width
RST Pulse Width
PARAMETER
PARAMETER
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
t
t
OEW
t
t
t
t
t
t
t
t
t
t
ODO
t
t
ACC
COE
COE
OEE
RST
AW
WC
WR
WC
WR
CW
CO
OD
OH
WP
DH
CO
OD
WP
DH
RC
OE
DS
RC
OE
RR
DS
12 of 18
MIN
120
120
100
105
120
20
20
45
5
5
0
MIN
120
120
DS1248W-120
90
20
50
20
5
5
0
5
TYP
MAX
120
120
60
40
40
MAX
100
100
40
40
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
NOTES
10
10
5
5
3
5
5
4
4
5
5
3
4
4