BCR523E6327XT Infineon Technologies, BCR523E6327XT Datasheet - Page 2

• Manufacturer Part Number: BCR523E6327XT
• Manufacturer: Infineon Technologies

Specifications of BCR523E6327XT

• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 70
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
1
2
3
Thermal Resistance
Parameter
Junction - soldering point
BCR523
BCR523U
C
C
C
C
C
C
C
Pb-containing package may be available upon special request
For calculation of R
Pulse test: t < 300µs; D < 2%
CB
EB
= 100 µA, I
= 10 µA, I
= 50 mA, V
= 50 mA, I
= 100 µA, V
= 10 mA, V
= 50 mA, V
= 5 V, I
= 50 V, I
C
E
B
E
B
= 0
CE
CE
CE
= 0
CE
= 2.5 mA
= 0
= 0
thJA
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
= 5 V
please refer to Application Note Thermal Resistance
2)
A
= 25°C, unless otherwise specified
3)
2
f
Symbol
V
V
I
I
h
V
V
V
R
R
Symbol
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
1
1
thJS
/ R
2
min.
0.09
0.3
0.4
0.7
50
50
70
-
-
-
-
Values
Value
typ.
100
0.1
215
105
1
-
-
-
-
-
-
-
-
max.
0.11
0.72
100
0.3
1.4
1.3
BCR523...
1
2007-07-24
-
-
-
-
MHz
Unit
V
nA
mA
-
V
k
-
Unit
K/W