2N5666JANTX MICROSEMI, 2N5666JANTX Datasheet - Page 2

• Manufacturer Part Number: 2N5666JANTX
• Manufacturer: MICROSEMI

Specifications of 2N5666JANTX

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 200V
• Collector-base Voltage: 250V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 5A
• Dc Current Gain (min): 5
• Power Dissipation: 1.2W
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-5
• Lead Free Status / Rohs Status: Not Compliant

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
I
I
I
Collector-Emitter Saturation Voltage
I
I
I
Base-Emitter Saturation Voltage
I
I
I
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
Output Capacitance
V
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
Turn-Off Time
V
T4-LDS-0062 Rev. 1 (081095)
C
C
C
C
C
C
C
C
C
C
C
CB
CC
CC
= 0.5Adc, V
= 1.0Adc, V
= 3.0Adc, V
= 5.0Adc, V
= 3.0Adc, I
= 3.0Adc, I
= 5.0Adc, I
= 3.0Adc, I
= 3.0Adc, I
= 5.0Adc, I
= 0.5Adc, V
= 10Vdc, I
= 100Vdc; I
= 100Vdc; I
B
B
B
B
B
B
CE
CE
CE
CE
CE
E
= 0.3Adc
= 0.6Adc
= 1.0Adc
= 0.3Adc
= 0.6Adc
= 1.0Adc
C
C
= 0, 100kHz ≤ f ≤ 1.0MHz
= 2.0Vdc
= 5.0Vdc
= 5.0Vdc
= 5.0Vdc
= 5.0Vdc, f = 10MHz
= 1.0Adc; I
= 1.0Adc; I
B1
B1
= 30mAdc
= -I
NPN POWER SILICON SWITCHING TRANSISTOR
B2
= 50mAdc
Qualified per MIL-PRF-19500/455
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
All Types
2N5664, 2N5666
2N5665, 2N5667
All Types
2N5664, 2N5666
2N5665, 2N5667
All Types
TECHNICAL DATA SHEET
Symbol
Symbol
V
V
C
|h
h
CE(sat)
BE(sat)
t
t
off
FE
obo
on
fe
|
Min.
Min.
5.0
2.0
40
25
40
25
15
10
Max.
Max.
0.25
120
120
0.4
0.4
1.0
1.2
1.2
1.5
7.0
1.5
2.0
75
Page 2 of 3
Unit
Unit
Vdc
Vdc
pF
μs
μs