2N5666JANTX MICROSEMI, 2N5666JANTX Datasheet - Page 3

2N5666JANTX

Manufacturer Part Number
2N5666JANTX
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of 2N5666JANTX

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
200V
Collector-base Voltage
250V
Emitter-base Voltage
6V
Collector Current (dc) (max)
5A
Dc Current Gain (min)
5
Power Dissipation
1.2W
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-5
Lead Free Status / Rohs Status
Not Compliant
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
SAFE OPERATING AREA
DC Tests
T
Test 1
V
V
Test 2
V
V
V
V
Test 3
V
V
V
V
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0062 Rev. 1 (081095)
C
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 100°C, 1 Cycle, t ≥ 1.0s, t
= 6.0Vdc, I
= 3.0Vdc, I
= 32Vdc, I
= 40Vdc, I
= 29Vdc, I
= 37.5Vdc, I
= 200Vdc, I
= 200Vdc, I
= 300Vdc, I
= 300Vdc, I
C
C
C
C
C
C
C
C
C
= 0.75Adc
= 0.75Adc
= 0.4Adc
C
= 5.0Adc
= 5.0Adc
= 29mAdc
= 19mAdc
= 21mAdc
= 14mAdc
= 0.4Adc
r
+ t
NPN POWER SILICON SWITCHING TRANSISTOR
f
= 10μs
2N5664 , 2N5665
2N5666, 2N5667
2N5664
2N5665
2N5666
2N5667
2N5664
2N5666
2N5665
2N5667
Qualified per MIL-PRF-19500/455
TECHNICAL DATA SHEET
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